RN1607(TE85L,F) Discrete Semiconductor Products

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RN1607 (TE85L, F) is an array of pre-biased transistors with NPN and integrated circuit technology. It is a type of bipolar junction transistor (BJT) which consists of two BJT elements connected together in a single package format. It is mainly used for the power management and signal amplification needs of electronic systems like LED drivers, LED controllers, amplifiers, switch designs, and other similar applications.The RN1607 (TE85L, F) array has a dual gate structure that allows the current to flow in either direction. The pre-biased gate allows the device to be used in high side/low side configurations. This feature makes it suitable for applications like voltage regulators, linear output amplifiers, power supplies, and power control circuits. The pre-biased transistors provide a gain of 700, making it one of the highest amongst similar devices.When it comes to its working principle, the RN1607 is based on the fact that varying levels of current can be obtained by applying different voltages to the base of the device. This is known as “transconductance” and can be measured in megohms.This device is mainly used in applications that require low power dissipation due to its low on-state resistance. It can be used with a single power supply or multiple supplies, depending on its type. The power dissipation for the RN1607 (TE85L,F) can be as high as 350mA/V @25°C depending on the device’s type. Moreover, it has a thermal resistance of less than 3°C/W, allowing it to operate in temperatures of up to 75°C. It is also known for its low noise output and high noise immunity.The RN1607 (TE85L,F) is an ideal solution when the power requirements of a particular application require a low power transistor. This device can be used in various applications, from controlling the power of LED lights to increasing the efficiency of power supply. It is also ideally suited for portable electronic applications with its low power dissipation. Overall, the RN1607 (TE85L,F) is a highly reliable and versatile transistor with excellent performance. It is capable of switching high loads and is best suited for power controlled applications. Additionally, its high transconductance and low power dissipation make it a perfect solution for low power designs. Its dual gate structure allows it to be used in both high and low side configurations, making it suitable for many different applications. With its excellent thermal performance and reliability, this device is ideal for any application where low power and efficient performance is needed.

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