RN1610(TE85L,F) Allicdata Electronics
Allicdata Part #:

RN1610(TE85LF)TR-ND

Manufacturer Part#:

RN1610(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS 2NPN PREBIAS 0.3W SM6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: RN1610(TE85L,F) datasheetRN1610(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6
Description

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The RN1610(TE85L,F) is an array of bipolar (BJT) transistors containing two NPN and two PNP transistors in a single package. Each transistor has a base-emitter junction pre-biased at the nominal operating point of the transistor’s active region, making the array a pre-biased one. The RN1610 is designed to be used in a wide range of applications such as small relay drivers, motor drivers, unipolar actuator drivers and automotive applications that require high current drive.

The RN1610\'s working principle is based on the principles of bipolar (BJT). A bipolar transistor has two PN junctions, one between the base and emitter, and the other between the base and collector. When a small current is applied to the base, a large current flows between the collector and the emitter, allowing current amplification. The RN1610 takes advantage of this principle by including four transistors, two of which are NPN, and two of which are PNP, and pre-biasing the junctions at a predetermined voltage.

The pre-biased state of the RN1610 transistors is determined by the amount of current flowing through the base-emitter junction. This current is known as the “operating current” or “bias current.” The operating current is determined by two resistors, a first resistor that sets the base-emitter junction operating current and a second resistor, which sets the collector-emitter junction operating current. The combination of these two resistors determines the precise voltage at the junction when the transistor’s active region is in operation. This ensures that the transistor can handle the expected amount of power without going into saturation.

The RN1610 can be used in a variety of applications that require a high current drive. The most common applications are small relay drivers, motor drivers, unipolar actuator drivers and automotive applications. The pre-biased array of transistors provides an optimal operating point for each application, allowing for efficient power conversion and operation. Additionally, the RN1610 has a low power dissipation, making it suitable for low power applications.

In summary, the RN1610 is an array of bipolar (BJT) transistors containing two NPN and two PNP transistors in a single package. The transistors are pre-biased at the nominal operating point of the transistor’s active region, making the array a pre-biased one. The RN1610 is designed to be used in a wide range of applications such as small relay drivers, motor drivers, unipolar actuator drivers and automotive applications that require high current drive. The RN1610 is a reliable, efficient, and cost-effective choice for applications that require a high current drive.

The specific data is subject to PDF, and the above content is for reference

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