RN1605TE85LF Discrete Semiconductor Products

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The RN1605TE85LF transistor array is a pre-biased, bipolar junction transistor (BJT) commonly used in a wide range of applications. It is a low power, low-voltage device which operates up to 25V and is capable of switching up to 0.1A peak with a 100mW to 900mW range. The primary features of the RN1605TE85LF are a small package size and low Quiescent Current (I(Quiet)). The RN1605TE85LF is also highly integrated, offering a single-package solution for designers when solving complex circuit designs.

The RN1605TE85LF contains two independent NPN transistors that are internally connected to form a Darlington pair. This provides better power gain than a normal NPN transistor and allows the RN1605TE85LF to switch a higher current than a single NPN transistor alone. The Darlington pair also provides drive strength which enables the device to be used in higher frequency applications.

The RN1605TE85LF also contains two polysilicon resistors which are used to pre-bias the transistors. This means the transistors are already in the ON state when power is applied, allowing the device to switch quickly and preventing any initial conditional errors. The pre-biased transistors also reduce current consumption, allowing the RN1605TE85LF to consume less power during operation.

The RN1605TE85LF is ideally suited for control applications such as switching lamp loads and motors or controlling the flow of charged particles in vacuum tubes. The pre-biased transistors make it suitable for applications where minimal power consumption is required. Additionally, the high switching frequency allows it to be used in high speed applications, such as for sampling, for multiplexing, and for serial data transmission.

The RN1605TE85LF operates over a broad temperature range from -40°C to +105°C. This makes it suitable for a wide range of applications in different environments. In addition, the device has a wide voltage operating range of 1.8 V to 25 V and is capable of switching up to 0.1A peak with a 100mW to 900mW range.

The RN1605TE85LF is a versatile device that can be used in a variety of applications where pre-biased transistors are required to reduce power consumption. The device can be used in high-temperature environments, and its small size makes it suitable for chipset designs. Additionally, its wide voltage operating range and high switching frequency enable the device to be used in a variety of high-speed applications.

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