| Allicdata Part #: | RN2118MFV(TPL3)TR-ND |
| Manufacturer Part#: |
RN2118MFV(TPL3) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PREBIAS PNP 0.15W VESM |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: | RN2118MFV(TPL3) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 47 kOhms |
| Resistor - Emitter Base (R2): | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 150mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SOT-723 |
| Supplier Device Package: | VESM |
| Base Part Number: | RN211* |
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The RN2118MFV(TPL3) is a single, pre-biased, bipolar junction transistor (BJT) that is used in a variety of applications. It has a collector-emitter voltage of 50V, a collector current of 200mA, a power dissipation of 500mW, and a VCE(sat) max of 120mV.
The RN2118MFV(TPL3) is a commonly used transistor in the electronics industry. It is typically used in general purpose switching, power switching, amplifier circuits, low frequency power amplifiers, and low noise amplifier circuits. Additionally, it can be used in current-mode switching supplies, step-up/down converters, boost/buck converters, DC/AC inverters, and linear voltage regulators.
The RN2118MFV(TPL3) has a unique construction that makes it ideal for a variety of applications. It is comprised of three layers; the base, the emitter, and the collector. The collector and emitter have a p-n-p-n structure, while the base layer is a PN junction that works to control the current flow between the collector and emitter. The base of the transistor is rather small compared to the other layers, and it is used to switch the current between the collector and emitter. The emitter and collector are both larger than the base and are generally used together to amplify the current. The RN2118MFV(TPL3) also has a pre-biased design, meaning that it requires a low forward base current to ensure maximum switching performance.
The RN2118MFV(TPL3) has several advantages over other transistors, including its low collector-emitter voltage, its low power dissipation, and its low saturation voltage. Additionally, its pre-biased construction makes it more reliable than other types of transistors, as it does not require as much base current for maximum performance. Additionally, its low voltage and power dissipation make it ideal for use in applications where power consumption must be kept low.
The RN2118MFV(TPL3)is a valuable tool for those who need a reliable and efficient way of switching current and amplifying signals in a variety of applications. Its low voltage and power dissipation, in combination with its pre-biased design, make it a great choice for many applications. Additionally, its unique construction and versatile applications make it a great addition to any engineer’s toolbox.
The specific data is subject to PDF, and the above content is for reference
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RN2118MFV(TPL3) Datasheet/PDF