| Allicdata Part #: | RN2104CT(TPL3)TR-ND |
| Manufacturer Part#: |
RN2104CT(TPL3) |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS PREBIAS PNP 0.05W CST3 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
| DataSheet: | RN2104CT(TPL3) Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | PNP - Pre-Biased |
| Current - Collector (Ic) (Max): | 50mA |
| Voltage - Collector Emitter Breakdown (Max): | 20V |
| Resistor - Base (R1): | 47 kOhms |
| Resistor - Emitter Base (R2): | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 50mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-101, SOT-883 |
| Supplier Device Package: | CST3 |
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The RN2104CT(TPL3) is a single, pre-biased, bipolar junction transistor (BJT) designed specifically to meet the needs of high-performance, high-speed applications. The RN2104CT(TPL3) has a wide operating temperature range from -40°C to 125°C and is optimized to provide up to 5A of current. It features low on-resistance and fast switching speeds for minimal power loss and low output capacitance for high frequency operation. In addition, the RN2104CT(TPL3) features a high breakdown voltage for the protection of sensitive components in harsh environments.
The RN2104CT(TPL3) is well suited for high-speed communication, power conversion, and automotive applications. It is typically used as a power transistor in switching power supplies, such as dc-dc converters, as well as amplifier stages in telecommunication systems. Additionally, the RN2104CT(TPL3) is used in high-power motor applications such as motor control and brushless dc motor control.
The RN2104CT(TPL3) works on the principle of the bipolar junction transistor (BJT). A BJT consists of three regions separated by a p-n junction, where the transistor operation is based on the flow of current along the collector-emitter junction. A small base current is used to control the larger collector-emitter current, allowing the transistor to act as a switch or amplifier. The RN2104CT(TPL3) is an NPN transistor, meaning that the base-emitter junction is forward biased and the base-collector junction is reverse biased.
The pre-biased design of the RN2104CT(TPL3) reduces the number of components required and allows for a shorter assembly time. The pre-biased feature also ensures that no base current flows during normal operation and allows for fast switching speeds. Additionally, the RN2104CT(TPL3) features an integrated voltage shunt that reduces power dissipation in the device. The RN2104CT(TPL3) is able to handle a wide range of voltage and current levels due to its high breakdown voltage.
The RN2104CT(TPL3) is a robust device that is well suited for power conversion, high-speed communication, automotive, and other applications where space is limited and fast switching speeds are required. It offers low on-resistance and high frequency operation, as well as a high breakdown voltage for increased protection in harsh environments. Its pre-biased design reduces the number of components required and allows for fast and reliable operation. Additionally, the integrated voltage shunt reduces power dissipation, making the RN2104CT(TPL3) an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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RN2104CT(TPL3) Datasheet/PDF