RN2103ACT(TPL3) Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	80mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	100mW
Mounting Type:	Surface Mount
Package / Case:	SC-101, SOT-883
Supplier Device Package:	CST3

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RN2103ACT (TPL3) is a pre-biased, PNP single-bipolar transistor (BJT). It can be used in different types of applications such as amplification, switching, and power regulation and has found wide adoption because of its low power consumption and high-frequency performance. This application field and working principle of the RN2103ACT transistor will be discussed in this article.The RN2103ACT offers excellent performance even in high-frequency applications. It is rated to operate at frequencies up to 100 MHz and provides suitable stability under varying loads. The pre-biased base-emitter junction offers a quick, predictable transition across its active state. The RN2103ACT is better suited for use in Class B Amplification, especially for audio-frequency (AF) signals, than for high-gain Class A amplifiers.The low-frequency interference immunity of the RN2103ACT transistor enables its use in filter-based power supply circuits and also in amplifier circuits of low-gain applications. The low-input bias current, in combination with its low-voltage offset voltage, makes it an ideal choice for precision circuits. The device is stable over temperature and provides excellent cut-off characteristics.To properly operate an RN2103ACT, it is necessary to consider whether to pre-bias the NPN side or the PNP side of the transistor. Pre-biased transistors are best suited for power supplies, switching circuits, and for audio applications. Pre-biased NPN transistors are better for general-purpose circuits and amplification, and may be used with AC or DC signals.The ground-emitter voltage drop of the RN2103ACT is lower than most conventional transistors. This is beneficial when the device is being used in applications requiring low-voltage operation. The integrated base-emitter junction can be also employed for noise reduction purposes.The RN2103ACT also offers low-power operation. It consumes just 4 mA of current and has a power gain that is greater than 20 dB when operated in the recommended temperature range. It is also capable of providing amplification powers in excess of 30 mW at 30 MHz.In summary, the RN2103ACT (TPL3) is a pre-biased, single-bipolar transistor (BJT) that offers excellent performance in power supply, switching, and audio-frequency applications. Its low-power consumption, high-frequency capabilities, low-voltage offset voltage, excellent cut-off characteristics, and low-input bias current make it an ideal choice for precision circuits and applications that require low-frequency interference immunity.

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