RN2108(T5L,F,T) Allicdata Electronics
Allicdata Part #:

RN2108(T5LFT)TR-ND

Manufacturer Part#:

RN2108(T5L,F,T)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS PNP 0.1W SSM
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: RN2108(T5L,F,T) datasheetRN2108(T5L,F,T) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM
Description

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The RN2108(T5L,F,T) transistor is classified as a single, pre-biased bipolar junction transistor, commonly referred to as a BJT. Bipolar junction transistors (BJTs) are unipolar devices, meaning they have one carrier type, either electron or hole. They are the most popular and widely used type of transistor and have a number of different application fields and working principles.

In terms of applications, the RN2108(T5L,F,T) is commonly used for applications requiring pre-biased operation and high voltage operation up to 600 volts. The transistor is designed for both normal operation and for high operating temperature applications. Furthermore, it can be used in power switching circuits, power supply regulation, telephone line protection and a number of other applications. It is also often used in medical equipment, consumer electronics and telecommunications.

In terms of its working principles, the RN2108(T5L,F,T) is a NPN semiconductor. It contains “base”, “emitter” and “collector” terminals, with the base being metallurgically bonded to the substrate. When a certain amount of current is passed through the base-emitter junction due to an applied voltage, it will cause a tiny current disruption to the collector, thereby resulting in an amplification of the incoming signal. Additionally, a certain amount of current will also flow through the emitter-collector junction, causing the transistor to be pre-biased. Therefore, the RN2108(T5L,F,T) functions by providing amplification and pre-biased operation.

The RN2108(T5L,F,T) is a particularly popular choice for a variety of applications due to its relatively high gain and low saturation voltage. It is easy to integrate into existing circuitry, providing increased efficiency and performance. The pre-biased nature also means that it can improve the speed of operation and reduce the overall power consumption of a system. In addition, the high-voltage capability of the transistor allows power switches to be used in applications with large voltage differences.

In conclusion, the RN2108(T5L,F,T) is a type of single, pre-biased bipolar junction transistor that offers a number of application fields and working principles. Not only does it provide reliable amplification and pre-biased operation, but it also allows its integration into existing circuitry, providing increased efficiency and performance. Due to its diverse range of applications and efficient nature, the RN2108(T5L,F,T) is a popular choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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