RN2117(T5L,F,T) Allicdata Electronics
Allicdata Part #:

RN2117(T5LFT)TR-ND

Manufacturer Part#:

RN2117(T5L,F,T)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS PREBIAS PNP 0.1W SSM
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: RN2117(T5L,F,T) datasheetRN2117(T5L,F,T) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM
Description

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The RN2117 (T5L,F,T) is a single, pre-biased bipolar junction transistor (BJT) designed for a wide range of applications. Its main purpose is to amplify signals in circuits, which it does by allowing for a controlled flow of electricity between two points (emitter and collector) when a voltage is applied at the base terminal. The transistor also features a reverse-biased emitter protection Diode (EPD) which limits current flow in the reverse direction and helps protect against transient events.

The RN2117 is bipolar with three terminals, including a base, emitter, and collector. The base terminal is used to turn the device on or off by controlling the voltage applied to it. When a voltage source is connected to the base terminal, a small current is allowed to flow between the emitter and collector, turning the device on. When this current flow is amplified, a larger current flows between the emitter and collector, providing amplification.

The RN2117 has many applications, including audio amplifiers, radio frequency (RF) amplifiers, pulse-width modulators (PWM) for motor speed control, and power switching for low-power circuits. As an audio amplifier, the RN2117 can be used to increase or decrease the power of an audio signal by controlling the current flow between the emitter and collector. In RF amplifiers, the transistor is used to amplify or attenuate a radio frequency signal, allowing for more applications and better reception of signals. As a PWM, the RN2117 can be used to control the speed of motors by rapidly switching the voltage applied to it on and off.

The RN2117 has several unique benefits, such as its extremely low capacitance and an extremely wide-range of common emitter gain. This allows for low distortion and low noise operation, making it an ideal choice for many applications. In addition, the pre-biasing feature allows for wide-bandwidth operation, up to 1.3 GHz for high speed switching of current. This feature is beneficial for power switching, as it can reduce heat dissipation and power consumption.

In summary, the RN2117 is a versatile, single, pre-biased, bipolar junction transistor that is suitable for a wide range of applications. Its pre-biasing feature allows for wide-bandwidth operation, while its extremely low capacitance and wide common emitter gain provide low distortion and low noise operation. Additionally, its reverse-biased emitter protection diode helps protect against transient events, making it an ideal choice for many circuit applications.

The specific data is subject to PDF, and the above content is for reference

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