Allicdata Part #: | SCH1335-TL-H-ND |
Manufacturer Part#: |
SCH1335-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 12V 2.5A SCH6 |
More Detail: | P-Channel 12V 2.5A (Ta) 800mW (Ta) Surface Mount 6... |
DataSheet: | SCH1335-TL-H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 112 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 3.1nC @ 4.5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 6V |
FET Feature: | -- |
Power Dissipation (Max): | 800mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-SCH |
Package / Case: | SOT-563, SOT-666 |
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SCH1335-TL-H is a N-channel junction field-effect transistor (J-FET) designed for a variety of circuit filtering, switching and amplification applications. It is a type of FET, or Field Effect Transistor, since it uses an electric field to control a semiconductor-based switch. A FET has three components: the source (S) which is connected to the positive (or anode) part of the circuit, the drain (D) which is connected to the negative (or cathode) part of the circuit, and the gate (G) which is the terminal that controls the opening and closing of the switch. This transistor is commonly used in amplifiers, in telecommunications and computer networking systems, in audio applications, in power supplies, and in audio mixing and recording equipment.
The SCH1335-TL-H FET has a max drain current of 1.7 amperes, a max drain voltage of 50 volts, and a max gate voltage of ±20 volts. It also has a max power dissipation (PD) of 1.5 watts and a max junction temperature of 175 degrees C. The drain-source breakdown voltage (BVDSS) is given as 25 volts and the breakdown voltage between the gate and source (VGS) is also given as 25 volts. The on resistance (RDS) is given as 3 ohms. This FET is typically used as a switch and amplifier due to its low on resistance and high breakdown voltages.
The working principle of the SCH1335-TL-H FET is quite simple. When the gate and source terminals are held at the same potential, electric charge accumulates near the gate and begins to flow through the semiconductor material of the FET. This electric current then acts as a switch, allowing current to flow from the source to the drain and thus “turning on” the FET. By controlling the voltage applied to the gate terminal, the amount of current flowing from the source to the drain can also be controlled, making the FET an ideal device for current regulation and amplification.
The SCH1335-TL-H FET is a reliable and versatile device suitable for a variety of applications. Its low on resistance and high breakdown voltages make it an ideal amplifier, while its low power dissipation makes it suitable for sensitive audio applications. Its wide operating range makes it suitable for use in a variety of power supplies and amplifying circuits, as well as telecommunications and computer networking systems. It is also widely used in mixing and recording systems, providing a clean and powerful signal.
The specific data is subject to PDF, and the above content is for reference
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