SCH1332-TL-H Allicdata Electronics
Allicdata Part #:

SCH1332-TL-H-ND

Manufacturer Part#:

SCH1332-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 2.5A SCH6
More Detail: P-Channel 20V 2.5A (Ta) 1W (Ta) Surface Mount 6-SC...
DataSheet: SCH1332-TL-H datasheetSCH1332-TL-H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 95 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 10V
FET Feature: --
Power Dissipation (Max): 1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-SCH
Package / Case: SOT-563, SOT-666
Description

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The SCH1332-TL-H is a single P-channel MOSFET transistor manufactured by PHOENIX Contact, a global provider of electrical and electronic products. The device is housed in a TO-220 package and is formed of a high temperature silicon junction with integrated P-channel MOSFET technology. Its TO-220 package makes the device convenient for a wide range of applications that require a small size, high temperature, and electrical insulation.

The SCH1332-TL-H is primarily used as a switch or amplifier in various types of electronic circuits. In switching applications, the device can be used as a single-pole, single-throw device to open or close a circuit. In amplifier applications, it can be used as a simple amplifier for small signals. The P-channel MOSFET transistor is also useful in power supply designs, where it can switch high current loads on and off with minimal power consumption.

The working principle of the SCH1332-TL-H is based on the MOSFET principle, which stands for metal-oxide-semiconductor field-effect transistor. The device is composed of three regions: the gate region, the source region, and the drain region. The gate region is the control region, where a small voltage or current is applied that controls the current flowing through the device. The source region is the input port, where the input current is supplied. The drain region is the output port, where the output current is supplied.

The device operates on the principle of voltage-controlled current flow. When a DC voltage is applied to the gate terminal, an electric field is created that attracts electrons from the source to the drain, thus creating a low resistance path across the channel between the source and the drain. The voltage at the gate terminal controls the current flow; when the voltage is increased, the current flow increases and when the voltage is decreased, the current flow decreases. This type of transistor is often referred to as an enhancement-mode MOSFET, since the device is normally \'off\' and requires a voltage to be applied on the gate in order to \'turn on\' the transistor.

The SCH1332-TL-H has a drain-source voltage rating of 20V, a drain-gate voltage rating of -20V, and a drain current rating of -2A. The device also has an on-resistance of 8.5Ω and an input capacitance of 7.3pF. It is available in various operating temperature ranges from -65°C to +150°C, making it suitable for a wide range of applications.

The SCH1332-TL-H is a versatile device that can be used in a wide range of applications, such as power amplifiers, digital control circuits, switching applications, and more. Its low resistance, high current, and high temperature capability make it useful in many types of circuits. The device is easy to use, economical, and available in a variety of packages. It is a reliable and efficient device and a great choice for applications requiring single-pole, single-throw switching, signal amplification, and power supply design.

The specific data is subject to PDF, and the above content is for reference

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