Allicdata Part #: | SCH1330-TL-WOSTR-ND |
Manufacturer Part#: |
SCH1330-TL-W |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 20V 1.5A SOT563 |
More Detail: | P-Channel 20V 1.5A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | SCH1330-TL-W Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 1.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 241 mOhm @ 750mA, 4.5V |
Vgs(th) (Max) @ Id: | 1.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 1.7nC @ 4.5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 120pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-563/SCH6 |
Package / Case: | SOT-563, SOT-666 |
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.SCH1330-TL-W is a N-channel enhancement mode MOSFET which is widely used in many power management and control applications. This device is available in a SO8-N package so it is easy to install and use. The SCH1330-TL-W has a low on-resistance and can handle high currents, making it an ideal choice for switching and control applications in industrial, commercial and consumer applications.
The primary application fields of the SCH1330-TL-W are power supplies, DC/DC converters, switching regulators, motor control, solar power systems and automotive electronics. This device is particularly suited to applications operating in the triangular waveform or Pulse Width Modulation (PWM) operation. The low on-resistance and low gate threshold voltage makes the device suitable for high frequency applications, such as in switching power supply circuits.
The main features of the SCH1330-TL-W are a low gate charge, high current rating, high pulse width power dissipation and low total gate charge. This device is suitable for use with a wide range of supply voltages, ranging from 5 V to 55 V.
The working principle of the SCH1330-TL-W is based on the fact that is an enhancement mode MOSFET. As such, the gate of the MOSFET acts like a capacitor and the drain acts like an inductor. When the gate is charged up, the drain voltage increases and when the gate voltage decreases, the drain voltage decreases. By controlling the amount of charge on the gate, the resistance of the device can be controlled and the current flow through the device can be regulated.
The transistor maintains its conducting state even after the input pulse is removed. This is known as the reverse recovery time and is important in applications such as power supplies, motor control and switching applications. The device can be used with a wide range of gate voltages to control the current and can be used in both non-inverting and inverting configurations.
The use of the SCH1330-TL-W is not limited to just power and control applications. It is also suitable for use in lighting and display applications, such as LED and LCD displays. In these applications, the device can be used to control the brightness or luminosity of the display. This is done by controlling the amount of current flowing through the device and by varying the gate voltage.
In conclusion, the SCH1330-TL-W is an N-channel enhancement mode MOSFET which is widely used in a variety of power management and control applications. It has excellent characteristics for switching and control applications and is available in a low-cost SO8-N package. This device is ideal for applications that require high current and excellent switching performance.
The specific data is subject to PDF, and the above content is for reference
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