SCH1345-TL-H Allicdata Electronics
Allicdata Part #:

SCH1345-TL-H-ND

Manufacturer Part#:

SCH1345-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 20V 4.5A SOT563
More Detail: P-Channel 20V 4.5A (Ta) 1W (Ta) Surface Mount SOT-...
DataSheet: SCH1345-TL-H datasheetSCH1345-TL-H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 49 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
FET Feature: --
Power Dissipation (Max): 1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-563/SCH6
Package / Case: SOT-563, SOT-666
Description

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The logic level FET labelled SCH1345-TL-H is designed to meet the requirements for a wide range of applications that require high current drive and low power consumption. The device is capable of quickly switching digital signals up to 10 Watts, and offers excellent performance as well as low thermal resistance.

The SCH1345-TL-H is a single N-channel, Logic Level Gate FET that is designed for high current loads and can be used for switching applications or digital circuits. The FET has a high input impedance that allows it to drive large load currents, and the low power consumption makes it ideal for low power applications.

The FET is made up of two parts, the channel and the gate. The channel is the pathway through which current flows and is made up of an N-type material. The gate is the voltage that is applied to control the current in the channel, and is made up of the P-type material.

When there is no voltage applied to the gate, the fence is not conducting and the channel does not allow any current to flow. When a voltage is applied to the gate, the channel pulls in electrons, creating an electric field in the channel. This electric field creates a current that can flow through the channel, and this is what switches the device on. The channel can also be selectively blocked by changing the gate voltage, so that the current is not allowed to flow.

The SCH1345-TL-H FET is capable of handling up to 10 Watts of power and is suitable for switching applications in any digital circuit. It is also used in a wide range of high power applications such as power supplies, motor controls, and LED drivers. The FET can withstand high voltage and can be used for many different applications.

The FET is designed for low dissipated power and has a low thermal resistance that helps reduce the heating effect on the device. The FET is rated for a safe operating temperature range of -40 °C to 150 °C, making it suitable for a wide range of applications in various environments. The logic level FET is also designed to meet the requirements for low-power and high current drive.

The SCH1345-TL-H FET is an ideal device for applications requiring a combination of high current drive and low power consumption. The FET is a reliable and robust semiconductor, capable of quickly switching digital signals while maintaining low power consumption. The device is suitable for a wide range of applications and is capable of operating in tough operating conditions.

The specific data is subject to PDF, and the above content is for reference

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