SCH1433-TL-W Discrete Semiconductor Products

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SCH1433-TL-W is a single Transistor Field Effect Transistor (FET). It has a large current handling capability, high input impedance and low on-state resistance. SCH1433-TL-W can be used in a variety of applications such as high frequency amplifiers, digital switching, radio and communications circuits, switching power converters, etc.

The fundamental operation of a FET is based on the field-effect principle. This principle states that the current flow between two terminals (source and drain) is controlled by the positive or negative voltage applied to the gate terminal. Depending on the type of FET (N-channel or P-channel) the voltage applied to the gate terminal affects the current flow in different ways. N-channel FETs are typically used when a high input impedance is desired, while P-channel FETs are typically used for power switching applications.

SCH1433-TL-W is an N-channel FET, and its operation is based on the field effect principle. The structure of the device contains a source and a drain, separated by a thin Gate Oxide layer, then followed by a Gate. When a small voltage is applied to the Gate (around 2 to 5 volts), the thin Gate Oxide layer creates a region of high electric field (field-effect), which in turn results in an increase of electron concentration at the surface of the Gate and an inhibition of the current flow between Source and Drain. As a result, the current flow between source and drain is decreased. The amount of current flowing is also proportional to the voltage applied at the gate. When the voltage applied to the Gate is increased, the Gate Oxide becomes thicker, pushing the electrons away and allowing the current flow to increase.

Schematic representation of an N-channel FET with its output characteristics is shown in the figure. Output characteristics of the N-channel FET are different from that of a P-channel MOSFET, as the output voltage is not dropping to zero when the Gate voltage is increased. Instead, the voltage at the Drain terminal increases, thus resulting in a high-on-state resistance.

SCH1433-TL-W has an insulated gate, a low on-state resistance (RDS(ON)), and a high Drain-Source breakdown voltage (BVDSS). This makes it suitable for a wide range of applications such as high frequency amplifier circuits, digital switching and radio and communications circuits. Due to its low on-state resistance, it is also well-suited for switching power converters and as a driver for switching power transistors.

In summary, SCH1433-TL-W is a single N-channel FET that is used in a variety of applications. Its operation is based on the field-effect principle, and it has a high input impedance, low on-state resistance, and a high Drain-Source breakdown voltage. It is suitable for high frequency amplifiers, digital switching, radio and communications circuits, and as a driver for switching power transistors.

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