
SI1902CDL-T1-GE3 Discrete Semiconductor Products |
|
Allicdata Part #: | SI1902CDL-T1-GE3TR-ND |
Manufacturer Part#: |
SI1902CDL-T1-GE3 |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 20V 1.1A SC-70-6 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 1.1A 420mW Sur... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.10000 |
10 +: | $ 0.09700 |
100 +: | $ 0.09500 |
1000 +: | $ 0.09300 |
10000 +: | $ 0.09000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 1.1A |
Rds On (Max) @ Id, Vgs: | 235 mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 62pF @ 10V |
Power - Max: | 420mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-70-6 (SOT-363) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors are an important part of many electronic circuits, as they help in controlling the flow of electricity. Among the different types of transistors, one of the most commonly used is the FET (Field Effect Transistor). FETs are used in devices such as amplifiers, oscillators and logic gates, to name a few.
The SI1902CDL-T1-GE3 is an Application Specific Field Effect Transistor array, which combines multiple transistors in one case. It is used in a wide variety of applications, including but not limited to, small signal amplifiers, switching circuits, power control and communications. This particular transistor array consists of two MOSFETs, which are connected into the circuit in parallel.
The working principle of the SI1902CDL-T1-GE3 is based on the two MOSFETs connected in parallel. One MOSFET has a source pin which applies a gate voltage to it and controls the current flow in the circuit. The other MOSFET has a drain pin which provides the output voltage and also controls the current flow. When the source pin of the first MOSFET receives a gate voltage, it reduces the resistance of the circuit, thus enabling a higher current output. When the drain pin of the second MOSFET receives a voltage, it reduces the resistance of the circuit, thus enabling closer regulation of the current through the circuit.
The resulting effect of the two MOSFETS in parallel, is a transistor array which is designed to perform multiple functions simultaneously. It is designed so that two MOSFETs can be wired for different voltages to achieve higher or lower gains. It is also designed so that it can be easily integrated into existing systems, and can be used in high-efficiency switching applications. This makes the SI1902CDL-T1-GE3 an ideal choice for a wide variety of applications.
The SI1902CDL-T1-GE3 is an ideal choice for those looking for a high-efficiency, highly integrated, and highly performant transistor array. Its ability to integrate into existing systems, and to be wired for different gains, make it a versatile tool for a variety of applications. Its high efficiency and low-noise characteristics make it suitable for a wide range of applications, from small signal amplifiers to communications, and power control.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI1913DH-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 0.88A SC... |
SI1902CDL-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 1.1A SC-... |
SI1988DH-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 1.3A SC7... |
SI1970DH-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 1.3A SC7... |
SI1965DH-T1-E3 | Vishay Silic... | 0.14 $ | 1000 | MOSFET 2P-CH 12V 1.3A SC7... |
SI1988DH-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 20V 1.3A SC-... |
SI1903DL-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 0.41A SC... |
SI1900DL-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2 N-CH 30V SC70-6M... |
SI1967DH-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 1.3A SC7... |
SI1902DL-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 0.66A SC... |
SI1905BDH-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 8V 0.63A SC7... |
SI1967DH-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 1.3A SC7... |
SI1922EDH-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 1.3A SOT... |
SI1972DH-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 1.3A SC7... |
SI1912EDH-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 1.13A SC... |
SI1917EDH-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 12V 1A SC70-... |
SI1970DH-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 1.3A SC7... |
SI1905DL-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 8V 0.57A SC7... |
SI1926DL-T1-GE3 | Vishay Silic... | -- | 6000 | MOSFET 2N-CH 60V 0.37A SO... |
SI1958DH-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 1.3A SC7... |
SI1900DL-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 0.59A SC... |
SI1926DL-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 60V 0.37A SC... |
SI1902DL-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 20V 0.66A SC... |
SI1913EDH-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 0.88A SC... |
SI1965DH-T1-GE3 | Vishay Silic... | -- | 3000 | MOSFET 2P-CH 12V 1.3A SC7... |
SI1972DH-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 1.3A SC-... |
SI1903DL-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2P-CH 20V 0.41A SC... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...

MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...

MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...

MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...

MOSFET 2N-CH 56LFPAKMosfet Array

MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...
