SI1902CDL-T1-GE3 Allicdata Electronics

SI1902CDL-T1-GE3 Discrete Semiconductor Products

Allicdata Part #:

SI1902CDL-T1-GE3TR-ND

Manufacturer Part#:

SI1902CDL-T1-GE3

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 20V 1.1A SC-70-6
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 1.1A 420mW Sur...
DataSheet: SI1902CDL-T1-GE3 datasheetSI1902CDL-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.10000
10 +: $ 0.09700
100 +: $ 0.09500
1000 +: $ 0.09300
10000 +: $ 0.09000
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.1A
Rds On (Max) @ Id, Vgs: 235 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 62pF @ 10V
Power - Max: 420mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
Description

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Transistors are an important part of many electronic circuits, as they help in controlling the flow of electricity. Among the different types of transistors, one of the most commonly used is the FET (Field Effect Transistor). FETs are used in devices such as amplifiers, oscillators and logic gates, to name a few.

The SI1902CDL-T1-GE3 is an Application Specific Field Effect Transistor array, which combines multiple transistors in one case. It is used in a wide variety of applications, including but not limited to, small signal amplifiers, switching circuits, power control and communications. This particular transistor array consists of two MOSFETs, which are connected into the circuit in parallel.

The working principle of the SI1902CDL-T1-GE3 is based on the two MOSFETs connected in parallel. One MOSFET has a source pin which applies a gate voltage to it and controls the current flow in the circuit. The other MOSFET has a drain pin which provides the output voltage and also controls the current flow. When the source pin of the first MOSFET receives a gate voltage, it reduces the resistance of the circuit, thus enabling a higher current output. When the drain pin of the second MOSFET receives a voltage, it reduces the resistance of the circuit, thus enabling closer regulation of the current through the circuit.

The resulting effect of the two MOSFETS in parallel, is a transistor array which is designed to perform multiple functions simultaneously. It is designed so that two MOSFETs can be wired for different voltages to achieve higher or lower gains. It is also designed so that it can be easily integrated into existing systems, and can be used in high-efficiency switching applications. This makes the SI1902CDL-T1-GE3 an ideal choice for a wide variety of applications.

The SI1902CDL-T1-GE3 is an ideal choice for those looking for a high-efficiency, highly integrated, and highly performant transistor array. Its ability to integrate into existing systems, and to be wired for different gains, make it a versatile tool for a variety of applications. Its high efficiency and low-noise characteristics make it suitable for a wide range of applications, from small signal amplifiers to communications, and power control.

The specific data is subject to PDF, and the above content is for reference

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