| Allicdata Part #: | SI1926DL-T1-E3TR-ND |
| Manufacturer Part#: |
SI1926DL-T1-E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET 2N-CH 60V 0.37A SC-70-6 |
| More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 370mA 510mW Su... |
| DataSheet: | SI1926DL-T1-E3 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Base Part Number: | SI1926 |
| Supplier Device Package: | SC-70-6 (SOT-363) |
| Package / Case: | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power - Max: | 510mW |
| Input Capacitance (Ciss) (Max) @ Vds: | 18.5pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 1.4nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 340mA, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 370mA |
| Drain to Source Voltage (Vdss): | 60V |
| FET Feature: | Logic Level Gate |
| FET Type: | 2 N-Channel (Dual) |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SI1926DL-T1-E3 is an advanced power stage high-side MOSFET array. It has been designed to address the challenge of sourcing high-performance and cost-effective high-side MOSFET switches, especially when multiple switches are needed. The device is capable of handling up to 16A source/sink current and can operate from 9V to 45V supply voltage range. It includes two 8-channel switches arranged in a parallel/series configuration. The device also includes several features that enable it to adapt to many applications, from power conversion and automotive to consumer applications.
The SI1926DL-T1-E3 can be used in a variety of situations, particularly in power conversion and automotive applications. In power conversion, the device can be used for power transistor, loudspeaker switching and AC/DC motor control, and automotive applications may include seatbelts, window closure control, mirror adjustment and window switches. The device also can be used to switch household appliances such as vacuum cleaners and HVAC systems, as well as consumer products such as handheld electronics.
The SI1926DL-T1-E3 is designed to provide superior performance in a small form factor. It features low power consumption, high switching speed and high current drive capabilities, allowing it to provide efficient power stage operation while keeping overall size and weight to a minimum.
The SI1926DL-T1-E3 is composed of two 8-channel hot-swappable MOSFET arrays that can be programmed to operate from 9V to 45V supply voltage range. Each 8-channel array is composed of two low-side and two high-side MOSFETs, with a separate gate drive for each one. The SI1926DL-T1-E3 has the ability to source or sink up to 16A of current, which makes it suitable for a wide range of applications.
The SI1926DL-T1-E3 can be controlled by a wide range of microcontroller families. It features a built-in driver chip and a dedicated 8-bit parallel interface, which allows it to be programmed with up to 16-bit data. The device also features a shutdown input, which allows the user to control the power stage power supply. This makes the SI1926DL-T1-E3 suitable for applications that require flexible power control.
In addition, the device features a built-in thermal shutdown mechanism which protects the device from thermal damage. The device is also RoHS compliant and is designed to meet automotive grade quality requirements.
The SI1926DL-T1-E3 is a cost-effective, high-performance solution for powering multiple switch applications. Its small form factor and wide supply voltage range make it suitable for a broad range of applications. The device can also be quickly and easily programmed for a variety of uses, and its built-in driver chip and thermal shutdown protect the device from damage.
The specific data is subject to PDF, and the above content is for reference
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SI1926DL-T1-E3 Datasheet/PDF