SI1967DH-T1-GE3

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SI1967DH-T1-GE3 application field and working principle

The SiliconLabs SI1967DH-T1-GE3 offers a single, low-power dual N-channel enhancement mode MOSFET array in the convenient, easy-to-use 3mm x 3mm UDFN package. It is ideal for space-constrained applications across a wide range of markets, including automotive, consumer, industrial, and smartphones.

The package provides two N-channel MOSFETs, each with an independent gate, drain, and source. The SI1967DH-T1-GE3 allows a wide range of operating voltages, from 3V to 18V, and the output can be controlled through a Logic high or low (or LED) signal. It is designed for applications that need low RDS(on) and can be used both as a low side switch and as a high side switch.

Technical Specifications of SI1967DH-T1-GE3

• Operating voltage range: 3 V - 18 V
• Output current: 0.2 A - 3 A
• RDS(on): 0.02 Ω - 0.07 Ω
• Package: 3mm x 3mm UDFN
• Switching speed: up to 17 MHz

Application Fields of SI1967DH-T1-GE3

The main application for SI1967DH-T1-GE3 is in automotive applications. It is ideal for controlling electric motors, fans, pumps, and lighting systems. The small size and low power allows it to be used in compact designs, as well as in applications that need to be highly efficient. It also finds use in various consumer applications such as LED lighting, TV and monitor backlighting, and more. The low energy consumption of the device makes it a great choice for highly efficient products.

The SI1967DH-T1-GE3 is also widely used in industrial applications, such as controlling valves, motors, and sensors. Its low power consumption makes it suitable for applications that need to be reliable and long-lasting, and its small size makes it ideal for use in high-density applications. It is also used in smartphones, providing precise control over the display, camera, and other components.

Working Principle of SI1967DH-T1-GE3

The SI1967DH-T1-GE3 is a dual N-channel MOSFET array, which consists of two N-channel MOSFETs with an independent gate, drain and source. The output of the device is controlled by a logic high or low signal. When the logic level is high, the MOSFETs are turned on, allowing current to flow from the drain to the source. When the logic level is low, the MOSFETs are turned off, blocking current from flowing from the drain to the source. The MOSFETs are rated for a maximum output current of 3A, with an RDS(on) of 0.07 ohms and a switching speed of up to 17MHz. The maximum operating voltage is 18V, and the device can be used both as a low side switch and as a high side switch.

The SI193DH-T1-GE3 is designed to be easy to use and offers long-term reliability and efficiency. It is a cost-effective solution for a wide range of applications, from automotive to consumer to industrial. It is UL and TUV approved and offers an industry leading three-year warranty.

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