SI1912EDH-T1-E3 Discrete Semiconductor Products

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The SI1912EDH-T1-E3 is a MOSFET power array, designed primarily for full bridge applications in automotive, industrial, and telecom equipment. It is also suitable for switching power supplies and other high-power switching supplies. The device features an 18V, 30A continuous drain-source voltage range, 4A gate drive current rating, fast switching speed, and an integrated high-side and low-side driver. Additionally, the device includes overcurrent protection, thermal shutdown, and an integrated common-mode ESD protection. These features increase performance, reduce design complexity, and reduce costs in high-power applications.

The SI1912EDH-T1-E3 is a multi-channel MOSFET array, composed of four independent MOSFETs arranged in a standard full-bridge power configuration. This enables the device to act as a Dual-Pole, Single-Throw (DPST) switch, effectively controlling the voltage and current in the load. The device can switch currents up to 30A, with a maximum voltage rating of 18V. The integrated driver reduces the overall external circuit complexity, as it does not require an external driver. This also eliminates additional components and reduces design time, allowing for faster implementation times. Additionally, the device features integrated overcurrent protection and thermal shutdown, which is useful for applications that may require protection from current or thermal overload.

The integrated drivers ensure the device has fast switching speed and low EMI without requiring additional drivers or circuitry. Additionally, the device includes integrated common-mode ESD protection, which is important for applications that may be exposed to high-voltage surges. This integrated protection reduces the risk of damage due to ESD events, ensuring a long-term, reliable operation.

The device is designed for a wide range of applications, including automotive, industrial, and telecom equipment. The high current rating and fast switching speed makes it suitable for switching power supplies and other high-power applications. It is also useful for applications that require overcurrent or thermal protection, or common-mode ESD protection. Furthermore, the integrated drivers reduce costly external circuitry, decreasing design complexity and reducing cost.

Overall, the SI1912EDH-T1-E3 is an ideal MOSFET power array for full bridge applications in automotive, industrial, and telecom equipment. The high voltage, current, and speed ratings make it suitable for many high-power applications, and the integrated drivers reduce design complexity, while the integrated overcurrent protection and thermal shutdown ensure long-term reliability. Additionally, the integrated common-mode ESD protection reduces the risk of damage due to ESD events, increasing the device’s lifetime and ensuring safe operation.

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