SI1970DH-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI1970DH-T1-GE3-ND

Manufacturer Part#:

SI1970DH-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 30V 1.3A SC70-6
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 1.3A 1.25W Sur...
DataSheet: SI1970DH-T1-GE3 datasheetSI1970DH-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Base Part Number: SI1970
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI1970DH-T1-GE3 is a fully integrated P-Channel low voltage metal-oxide-semiconductor field-effect transistor (MOSFET) array. It is a transistor array suitable for a wide range of power supply and audio applications, such as power switching for Pico-Power applications and high voltage, Class-D audio amplifiers.

A MOSFET is an electronic device made from metal-oxide-semiconductor material. It is used as a switch or amplifier to control the flow of electricity through a circuit. A transistor array is made up of any number of transistors connected in series, arranged in a particular way to create a single circuit element. A MOSFET array is made up of several MOSFETS connected together to create a single circuit element, usually to operate at higher voltage and power levels.

The SI1970DH-T1-GE3 is designed to be used in high-power audio applications, such as Class-D amplifiers or a power switching application. This device combines several P-channel low voltage MOSFETs in a single monolithic structure, reducing power losses and increasing power supply efficiency. It is suitable for applications up to 20V and at frequencies of up to approximately 200kHz.

The array consists of four P-channel MOSFETs in a single package. Each MOSFET has a drain, a source and a gate terminal, connected together to form a single circuit element. The source terminals are connected together and the drain terminals are connected together. This arrangement allows for high voltage and high current operation with minimal power dissipation.

The SI1970DH-T1-GE3 has an internal resistor between the source and the gate of each MOSFET, which helps to reduce switching losses and ensure reliable operation under a variety of conditions. There is also an internal diode in each MOSFET, which helps to protect against overvoltage conditions.

The SI1970DH-T1-GE3 is typically used in power applications, such as a Class-D audio amplifiers, and in power switching for Pico-Power applications. The array is highly reliable and features a high switching frequency, low power consumption and excellent on-resistance performance. It is also suitable for applications involving power supply sequencing and voltage level shifting.

In conclusion, the SI1970DH-T1-GE3 is a versatile, low voltage, MOSFET array suitable for a wide range of power supply and audio applications. It has low power losses and high reliability, which makes it an ideal choice for demanding, high-power applications. Its internal resistor and diode help to protect against overvoltage conditions and reduce switching losses, making it suitable for even the most demanding applications.

The specific data is subject to PDF, and the above content is for reference

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