SI1905DL-T1-E3 Discrete Semiconductor Products

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The SI1905DL-T1-E3, a high-performance, low-power, TrenchMOS® power field-effect transistor (FET) array, is a valuable technology for transient undervoltage and overvoltage protection of today’s electronic equipment. This component is part of Infineon Technologies\' portfolio of MOSFET products, and is specifically designed for Hot Plug, Load Switching and General Purpose applications in end-products, such as programmable logic controllers, motor control systems and industrial automation equipment.

The SI1905DL-T1-E3 is a single chip that features two low-side DMOS (drain-source) field-effect transistors inside. Each DMOS consists of two source terminals, two gate terminals and two drain terminals, allowing for multiple applications. The high-performance and low-power consumption of this component make it ideal for applications that require high speed and low power consumption, making the component an ideal choice for system designers and engineers.

The SI1905DL-T1-E3 features an integrated charge pump and low-side driving circuitry, allowing the component to accommodate a wide range of input power supplies, ranging from 3V to 18V DC. The device also integrates a slew-rate limit, which helps to ensure a smooth turn-on and turn-off time frame, reducing the possibility of output transients. The component also features over-temperature protection, making it suitable for use in extreme operating temperature ranges.

The SI1905DL-T1-E3 is designed to provide increased protection and robustness in a wide range of applications, such as industrial equipment, automotive electronics, smartphones, and consumer applications. The component also provides enhanced EMI immunity, allowing for more reliable operation in noisy environments. This component is also available with ESD protection levels up to 8kV HBM, and can operate up to temperatures of 125°C.

The SI1905DL-T1-E3 is designed to reduce complex circuit designs, providing a simpler and more cost-effective solution for a wide range of applications. The component features a wide operating temperature range, allowing for use in extreme operating conditions, and has a low power consumption to keep power requirements for applications at a minimum. The component also features an integrated open-drain protection, which helps protect outputs. The array also includes logic level shifters, allowing designers and engineers to interface the array with different logic families.

The common-drain self-protection or "body biasing" of the SI1905DL-T1-E3 provides additional protection by driving the FET body to 12V. This body biasing prevents the device from entering into a linear mode when the power supply drops below a certain threshold, reducing the possibility of current leakage or output transients.

The SI1905DL-T1-E3 also features a built-in overvoltage protection circuit, which will shutdown the device when the input voltage exceeds an upper threshold of 18V. This circuit prevents downstream components from being connected to an excessive voltage source, making it an ideal choice for automotive applications, where the supply rail may be subject to potentially damaging overvoltage. Additionally, the device features a self-protection circuit, which will prevent the device from being overstressed if the operating temperature becomes too high.

In conclusion, the SI1905DL-T1-E3 is an innovative low-cost, low-power FET array, which provides increased protection and robustness in a wide range of applications. The component includes multiple integrated functions, including integrated charge pump, low-side driving circuitry, slew-rate limit and over-temperature protection. The device also features common-drain self-protection, as well as built-in overvoltage and self-protection circuits, making it an ideal choice for applications that require high speed and low power consumption.

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