
SI1913EDH-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI1913EDH-T1-E3TR-ND |
Manufacturer Part#: |
SI1913EDH-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 0.88A SC70-6 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 880mA 570mW Su... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 450mV @ 100µA |
Base Part Number: | SI1913 |
Supplier Device Package: | SC-70-6 (SOT-363) |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 570mW |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 1.8nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 490 mOhm @ 880mA, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 880mA |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI1913EDH-T1-E3 is a type of array found in transistors and FETs, specifically, MOSFETs. It is an advanced device with distinctive features that make it a highly versatile device for a variety of applications. This article will discuss the application field and working principle of the SI1913EDH-T1-E3.
The SI1913EDH-T1-E3 is capable of being used in a wide range of applications. It can be used for switching, motor control, power management, and lighting control, as well as for other applications that require robust and reliable performance. It also includes low on-resistance to ensure efficient operation and a low voltage threshold for improved design flexibility.
The SI1913EDH-T1-E3’s application field also includes automotive applications. Automotive applications benefit from its high temperature operating range, which is from -40 °C to +125 °C, as well as from its high breakdown voltage which allows it to be used in applications where a high breakdown voltage is required. Its wide operating range also makes it an ideal choice for automotive applications.
The working principle of the SI1913EDH-T1-E3 circuit is simple and only involves three components. The device is composed of a source terminal, a drain terminal, and a body terminal. Both the source and drain terminals are connected to the gate terminal. When the gate terminal is at a sufficient voltage, the source and drain terminals are opened and current flows in the channel between them. The current is regulated by the resistance of the channel, which is created by the body terminal.
The SI1913EDH-T1-E3 has a unique low voltage threshold of 0.8V, which makes it well-suited for use in designs that require low-power operation. In addition, its high-temperature operating range makes it suitable for use in automotive applications, where the device will be exposed to high temperatures. Both of these features give the device a high level of reliability and durability.
In conclusion, the SI1913EDH-T1-E3 is an advanced array found in transistors and FETs, specifically, MOSFETs. It has a wide range of applications, such as switching, motor control, power management, and lighting control. It is also capable of being used in automotive applications because of its high temperature operating range and its low voltage threshold. The working principle of the SI1913EDH-T1-E3 circuit is simple and consists of three components, a source terminal, a drain terminal, and a body terminal. The device has a unique low voltage threshold and a high-temperature operating range, both of which make it a highly reliable and durable device.
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