SI1988DH-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI1988DH-T1-GE3TR-ND

Manufacturer Part#:

SI1988DH-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 20V 1.3A SC-70-6
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 1.3A 1.25W Sur...
DataSheet: SI1988DH-T1-GE3 datasheetSI1988DH-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Base Part Number: SI1988
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 8V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI1988DH-T1-GE3 is a transistor array designed for a variety of applications, including power switch, interface, audio, and video. This component is a 4-channel CMOS source-follower power switch that supports both high- and low-side switch configurations. The SI1988DH-T1-GE3 is designed to enable low on-resistance and high switching speed, while at the same time having small board space requirements, low power consumption and wide operating temperature range. Additionally, built-in ESD protection allows for easy compliance with level 4 EMC requirements.

This component provides a 4-channel CMOS non-inverting control signal interface for each switch. The switching action is accomplished by applying the appropriate signal at each of the control pins. The SI1988DH-T1-GE3 will provide the required signal for the switch to be enabled, and the signal will remain in that state until the appropriate signal is removed from the control pin. This allows for a wide range of operation in terms of frequency, speed and signal shape.

The SI1988DH-T1-GE3 has very low on-state resistance which makes it an ideal choice for high-current loads. This component also incorporates automatic power management features to optimize the system’s power and control signals. The high-side switches use a P-channel MOSFET and the low-side switches use an N-channel MOSFET. This allows for a symmetric action of the switches and reduces the number of required components.

The SI1988DH-T1-GE3 also offers protection from over-voltage and over-temperature, as well as built-in ESD and latch-up protection. These features allow for reliable operation even in the harshest of environments. Additionally, the low-side switches can be used to drive inductive and capacitive loads with direct or current source driver. The SI1988DH-T1-GE3 also comes with an enable pin, allowing for easy power-down of the chip when it’s not in use.

The SI1988DH-T1-GE3 is designed to provide a high-performance solution, while still offering flexibility to meet a wide variety of application requirements. With its low on-state resistance and wide operating temperature range, the SI1988DH-T1-GE3 is ideal for a variety of applications. Its low power consumption, small board space requirement, built-in ESD protection, and wide switching speeds further add to the list of benefits that the SI1988DH-T1-GE3 has to offer.

The specific data is subject to PDF, and the above content is for reference

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