SI1972DH-T1-E3

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The SI1972DH-T1-E3 is an integrated three-channel FET/MOSFET array comprised of a single die. This versatile device possesses common-source and common-drain terminals, making it an ideal choice for use in adjustable gain, power-efficient, space-saving single amplifying applications. The SI1972DH-T1-E3 also allows for both reversible and non-reversible operation.

Applications for the SI1972DH-T1-E3 might include amplifiers, audio processors, RF amplifiers, audio/video receivers, DC/DC converters, and pulse power amplifiers. The output of the SI1972DH-T1-E3 is adjustable, with an output voltage of up to 30V and a current capacity of up to 100 mA. This device has storage temperature range of -65 to +150 degrees Celsius and operates from a power supply of 10 Volts.

The working principle behind the SI1972DH-T1-E3 is similar to that of other FET/MOSFET arrays. It utilizes the concept of voltage gating in order to control the flow of current between the emitter and collector terminals. This means that the device is able to adjust its output voltage level by simply controlling the incoming voltage on one of its input pins. The device utilizes three FET/MOSFET transistors, each of which is designed to be operated independently.

In order to operate the SI1972DH-T1-E3, the user needs to first supply the appropriate voltage to the array’s input pin. Once the necessary voltage has been applied, the array begins to operate. The output voltage is then determined by the incoming voltage, with the resolution of the variation being limited by the input voltage. Additionally, the array’s output impedance is also determined by the input voltage.

The FET/MOSFET transistors contained in the SI1972DH-T1-E3 array are designed in such a way that they have an extremely low saturation voltage compared to other similar FET/MOSFET transistors. This reduces the amount of power consumed by the array and makes the device more efficient. Additionally, the SI1972DH-T1-E3 also features a high-drain switchable current source, allowing it to be used in power-sensitive applications.

Overall, the SI1972DH-T1-E3 is an ideal choice for a wide range of applications due to its adjustable gain, power-efficiency, and space-saving design. Its working principle relies on the concept of voltage gating in order to control the current flow between the emitter and collector terminals. Its transistors feature a low saturation voltage, making the array highly efficient. Furthermore, the added feature of the high-drain switchable current source makes the SI1972DH-T1-E3 even more suitable for use in power-sensitive applications.

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