SI4200DY-T1-GE3

The SI4200DY-T1-GE3 is a high-performance power FET array that is ideal for power applications. This FET array offers a wide range of features and has been designed with advanced manufacturing techniques to provide the best performance and reliability.

The SI4200DY-T1-GE3 is a power FET array that comprises of two n-channel FETs. The FETs have a maximum drain-source voltage of 30V and operate at a maximum junction temperature of 150°C. The maximum current conveyed by the FETs is 180A. This FET array is suitable for use in low voltage switching applications and is available in a compact 8-pin package.

The FETs in the SI4200DY-T1-GE3 are designed with a normally-on design, meaning that the FETs are always on and will stay on until the gate voltage is sufficiently high. The FETs have a low ON-resistance, reducing the amount of power that is dissipated and providing better efficiency. The FETs are protected against Electrostatic Discharge (ESD) and are designed to meet the requirements of the Automotive Electronic Council (AEC) Q100-002 specification.

The SI4200DY-T1-GE3 also features an anti-parallel diode for each FET that helps to protect the FETs from current runaway. This feature helps to minimize the chances of device failure and increases the reliability of the FET array. The device features fast switching times and is designed to operate over a wide temperature range. This helps to provide reliable performance in harsh environments.

The SI4200DY-T1-GE3 is ideal for use in automotive and industrial applications that require fast switching and reliable high power performance. This FET array is designed to provide reliable power switching performance in a wide variety of conditions, making it an ideal choice for applications where reliability and performance are paramount.