Allicdata Part #: | SI4214DDY-T1-E3-ND |
Manufacturer Part#: |
SI4214DDY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 8.5A 8SO |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 8.5A 3.1W Surf... |
DataSheet: | SI4214DDY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 8.5A |
Rds On (Max) @ Id, Vgs: | 19.5 mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 15V |
Power - Max: | 3.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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SI4214DDY-T1-E3 is a surface-mount Power Trench® MOSFET array designed to reduce board space by providing three N-channel MOSFETs. It is a component of the infrared Small Signal MOSFET series. This device is a three-terminal, surface mount N-channel power field-effect transistor array. It combines three isolated N-channel Power MOSFETs into one package, making it a superior choice when compared to discrete device solutions.The SI4214DDY-T1-E3 offers excellent static and dynamic electrical characteristics. It has very low on-resistance and excellent commutation for fast switching circuits and low power losses. It also features ultra-low gate charge and low gate-to-drain capacitance to provide improved circuit design flexibility. The SI4214DDY-T1-E3 is ideal for use in power supply circuits, motor drive applications, power management circuits, power conditioning circuits, switching regulators, and audio amplifier circuits.
Application Field and Working Principle of SI4214DDY-T1-E3
Power MOSFET arrays are widely used in a variety of applications due to their superior switching performance, low on-resistance, and small form factor. The SI4214DDY-T1-E3 is ideal for use in power supply, motor drive, and switching circuits. Its three discrete N-channel MOSFETs are combined into one package to make it a superior choice for many applications.The SI4214DDY-T1-E3 is an N-Channel MOSFET array, which is a three-terminal device with two source terminals and a gate terminal. It operates in depletion mode, which means that when the gate voltage is below the threshold voltage, the MOSFET is open and no current flows. When the gate voltage is above the threshold voltage, the MOSFET is closed and current can flow from source to drain. The SI4214DDY-T1-E3 is designed with low on-resistance and gate-to-drain capacitance, making it suitable for fast switching applications. It also has excellent dynamic and static electrical characteristics such as low gate charge and very low on-resistance, making it a good choice for low power loss circuits. The SI4214DDY-T1-E3 is a three-terminal device and is typically used in production electronics such as power supply circuits, motor drive circuits, power management circuits, power conditioning circuits, switching regulators, and audio amplifier circuits.
The specific data is subject to PDF, and the above content is for reference
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