Allicdata Part #: | SI4226DY-T1-E3-ND |
Manufacturer Part#: |
SI4226DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 25V 8A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 25V 8A 3.2W Surfac... |
DataSheet: | SI4226DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Base Part Number: | SI4226 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 3.2W |
Input Capacitance (Ciss) (Max) @ Vds: | 1255pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 19.5 mOhm @ 7A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 8A |
Drain to Source Voltage (Vdss): | 25V |
FET Feature: | Standard |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Introduction
The SI4226DY-T1-E3 is a high performance digital transistor array, specifically designed for low power applications. It is based on a MOSFET-equipped process that offers a unique combination of extremely low on-state resistance and very low gate charge, typically resulting in a dramatic reduction in power dissipation. The device also offers superior input and output characteristics for applications that require high clock rates or low voltage operation.
Application Field and Working Principle
Applications
The SI4226DY-T1-E3 is capable of driving loads up to 60V at current levels up to 6A. It can be used for a number of low power applications such as motor control, motor driver, switching regulators, DC-DC converters, and many others. The device also offers superior protection against ESD and high-current transients. Additionally, the device can be used in fast switching applications with its maximum frequency capability of 12MHz.
Working Principle
The working principle of the SI4226DY-T1-E3 is based on the concept of “source and drain”. The source is the starting point of the device and the drain is the end point. The SI4226DY-T1-E3 consists of four FET arrays, each consisting of six transistors. These transistors are connected in series between the source and the drain. The SI4226DY-T1-E3 works by applying a voltage to the gate of the transistors. This voltage causes the transistors to conduct, allowing current to flow from the source to the drain. The amount of current that can flow through the device is determined by the voltage applied to the gate. As the voltage is increased, more current is allowed to flow, resulting in a higher drain current.
Conclusion
The SI4226DY-T1-E3 is a digital transistor array designed specifically for low power applications. Its combination of low on-state resistance and low gate charge makes it ideal for applications such as motor control, motor driver, DC-DC converters and others which require low power consumption. Additionally, its maximum frequency capability of 12MHz makes it suitable for fast switching operations. By understanding the working principle of the device, the SI4226DY-T1-E3 can be used to its full potential.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SI4226DY-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET 2N-CH 25V 8A 8-SOI... |
SI4276DY-T1-E3 | Vishay Silic... | 0.41 $ | 1000 | MOSFET 2N-CH 30V 8A 8SOMo... |
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SI4276DY-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 30V 8A 8-SOI... |
SI4226DY-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET 2N-CH 25V 8A 8SOIC... |
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