SI4202DY-T1-GE3 Discrete Semiconductor Products

Series:	TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	12.1A
Rds On (Max) @ Id, Vgs:	14 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	710pF @ 15V
Power - Max:	3.7W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

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Introducing SI4202DY-T1-GE3 The SI4202DY-T1-GE3 is a surface mount device that belongs to the broad category of transistors and field-effect transistors (FETs). More specifically, the device is classified as a MOSFET array. Utilizing the latest advancements in semiconductor technology, this device offers outstanding performance as a highly efficient switching and signal processing tool. In this article, we\'ll explain the application field and working principle of the SI4202DY-T1-GE3 device.Application Field The SI4202DY-T1-GE3 device is designed primarily for use in switching applications. It is used in circuits that require fast reaction times, high voltage blocking capabilities, and low on-resistance (RDS(on)) values. This makes the device ideal for use in automotive applications, as well as in lighting systems, alarm systems, and other home and industrial control systems.In addition to its wide usage in switching applications, the SI4202DY-T1-GE3 can also be used in signal processing applications that require high levels of precision. Its integrated circuitry offers exceptional signal-to-noise ratio (SNR), which makes it suitable for use in sensitive electronic systems.Working Principle The operating principle behind the SI4202DY-T1-GE3 device is based on the field-effect transistor (FET) technology. FETs are transistors that utilize a difference in electrical potential to control the current that flows between two terminals. The source and drain terminals of the transistor are connected to a gate terminal, which acts as an electrical barrier between the two. An electrical charge applied to the gate terminal can be used to control the current that flows through the device. In the case of the SI4202DY-T1-GE3 device, the integrated FET array consists of a number of FETs connected in parallel. These devices are designed to operate in an on/off fashion, with the on-resistance (RDS(on)) being relatively low compared to other FETs. This low RDS(on) allows for faster switching times, meaning that the device can respond more quickly to changes in the environment.Conclusion The SI4202DY-T1-GE3 device is a surface mount FET array designed primarily for use in switching and signal processing applications. It utilizes FET technology to control the current that flows between two terminals, and its low on-resistance (RDS(on)) allows it to achieve faster switching times. Due to its versatile application field and excellent performance, the SI4202DY-T1-GE3 device is an ideal choice for a wide range of applications.

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