SI4214DY-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SI4214DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4214DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 8.5A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 8.5A 3.1W Surf... |
DataSheet: | SI4214DY-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 8.5A |
Rds On (Max) @ Id, Vgs: | 23.5 mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 785pF @ 15V |
Power - Max: | 3.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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Transistors - FETs, MOSFETs - Arrays, such as the SI4214DY-T1-GE3, are widely used in integrated circuits. This type of device has many benefits, such as high speed operation, low power consumption, small size, and low on-resistance, making them ideal for applications ranging from power device switch control systems to low noise, low power circuit controllers. In this article, we are going to learn about the application field and working principle of the SI4214DY-T1-GE3.
The SI4214DY-T1-GE3 is a single-channel, p-channel logic-level enhancement mode (PMOS) FET array. It can be used in a variety of situations where a single output is required, such as driving LED circuits, powering LED backlight inverters, and datalink circuits. This device is particularly well suited for use in automotive and industrial applications, where transients and high temperatures must be accounted for. The device is also suited for use in communications, computer, and consumer electronics, where a low noise, low power operation and a high degree of sensitivity is often required.
The working principle of the SI4214DY-T1-GE3 is fairly straightforward. It consists of a single channel, source-drain architecture with a logic gate on the gate side. The logic gate is controlled by an input voltage. When the input voltage is low, the gate is open and current can pass through the channel, while the gate is closed when the input voltage is high. This gate control is essential for ensuring consistent performances and also provides protection against ESD or other transient voltages.
This FET array also features protection diodes, which make it suitable for driving capacitive loads and avoiding excess drain current. The device also contains a precision temperature-independent latch die and a temperature-independent drive temperature characteristic, which ensures its performance is not degraded at high temperatures.
In conclusion, the SI4214DY-T1-GE3 is a powerful and efficient single-channel PMOS FET array that is well suited for a variety of applications. It is designed for low-noise, low-power operation, and it is also well suited for use in automotive and industrial applications. Its simple architecture and protection diodes make it an attractive choice for driving LED circuits, powering LED backlight inverters, and datalink circuits. With its temperature-independent latch die and drive temperature characteristics, it is also reliable in high temperature environments.
The specific data is subject to PDF, and the above content is for reference
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