Allicdata Part #: | SI4204DY-T1-GE3TR-ND |
Manufacturer Part#: |
SI4204DY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 20V 19.8A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 20V 19.8A 3.25W Su... |
DataSheet: | SI4204DY-T1-GE3 Datasheet/PDF |
Quantity: | 12500 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Base Part Number: | SI4204 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 3.25W |
Input Capacitance (Ciss) (Max) @ Vds: | 2110pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 4.6 mOhm @ 10A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 19.8A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Standard |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4204DY-T1-GE3 is a type of field-effect transistor (FET) array. A field-effect transistor array is a form of integrated circuit that uses multiple FETs and MOSFETs (metal-oxide-semiconductor field-effect transistors) to achieve very specific electrical characteristics and functions. Its applications range from high-speed switching, overcurrent protection, voltage regulation, and analog to digital conversion.
A basic FET array contains two different types of transistors: the p-channel and the n-channel. The p-channel FETs are used for various applications, such as level-shifting and higher gain applications. On the other hand, the n-channel FETs are used for higher speed applications, such as low-pass filters and level-shifting, as well as for the applications mentioned in the p-channel devices.
The SI4204DY-T1-GE3 is a 4-channel dual-gate field-effect transistor array. It is essentially composed of four separate FETs with one common gate. It has a drain-source breakdown voltage of 40 V, which makes it suitable for applications requiring high voltage operation. It also has an operating temperature range of -40°C to +150°C.
The working principle of an FET array is simple. The external circuit is connected to the chip by the source and gate connections. The external circuit then drives the gate bias on each of the four FETs. Depending on the bias, the FETs can either be in a conducting or a non-conducting state. If the FETs are in a conducting state, then the gate-source voltage will be greater than the threshold voltage and the drain current will be allowed to flow from the source to the drain. If the FETs are in a non-conducting state, then the gate-source voltage will be lower than the threshold voltage and the drain current will be blocked.
The SI4204DY-T1-GE3 is widely used in many applications, including power management, energy conversion, and communications. In power management applications, it can be used for the control of DC-DC and AC-DC converters, as well as a high-speed switching application. In energy conversion applications, it can be used to create logic circuits and drive motors. In communications applications, it can be used to modulate high-speed signals.
The SI4204DY-T1-GE3 is an incredibly versatile and useful device for many electronic applications. It has a wide operating temperature range, a high drain-source breakdown voltage, and a low threshold voltage. Its application fields and working principle make it a key component of many commercial and industrial systems today.
The specific data is subject to PDF, and the above content is for reference
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