SI4214DDY-T1-GE3 Allicdata Electronics

SI4214DDY-T1-GE3 Discrete Semiconductor Products

Allicdata Part #:

SI4214DDY-T1-GE3TR-ND

Manufacturer Part#:

SI4214DDY-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 30V 8.5A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 8.5A 3.1W Surf...
DataSheet: SI4214DDY-T1-GE3 datasheetSI4214DDY-T1-GE3 Datasheet/PDF
Quantity: 15000
Stock 15000Can Ship Immediately
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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The SI4214DDY-T1-GE3 is a n-channel power metal oxide semiconductor field effect transistor (MOSFET) array consisting of 4 independent n-channel power MOSFETs. It is designed for use as a replacement for ultra-enhancement mode MOSFETs, offering superior on-state resistance and improved power dissipation capabilities.This type of power MOSFET array is suitable for a variety of applications, such as power management in mobile and consumer systems, high-performance and low-noise systems, and automotive systems. It is available in the industry-standard TO-252 package.

The SI4214DDY-T1-GE3 is a valuable tool for many applications, particularly those that require high current or power handling capabilities. It features an ultra-enhancement mode which allows it to control the switching of large currents while maintaining very low on-state resistance. The array also features an improved power dissipation capability, making it suitable for applications where high levels of power needs to be handled.

The operating principle of the SI4214DDY-T1-GE3 is relatively simple. Its 4 n-channel power MOSFETs are connected in parallel, allowing them to share the total current load between them. Each individual MOSFET is controlled via its own gate voltage, which determines its level of conduction. By regulating the gate voltage, the current flowing through the array can be controlled, allowing the SI4214DDY-T1-GE3 to be used as a switch for various power management tasks.

In addition to its on-state resistance and power dissipation capabilities, the SI4214DDY-T1-GE3 also features temperature protection circuitry ensuring safe operation in extreme operating temperatures. This type of circuit is especially important in applications where the MOSFET array is exposed to high levels of heat, such as in automotive systems, where the internal temperature of the array may exceed its recommended operating range. The temperature protection simply limits the maximum amount of heat that can be generated in the array, ensuring safe and reliable operation.

The SI4214DDY-T1-GE3 is a versatile and reliable tool for a variety of applications. With its low on-state resistance and improved power dissipation, it makes a great alternative to traditional MOSFETs. In addition, its temperature protection circuitry ensures reliable operation even in severe conditions, making it suitable for applications in automotive, industrial and consumer systems.

The specific data is subject to PDF, and the above content is for reference

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