SI4276DY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4276DY-T1-E3-ND

Manufacturer Part#:

SI4276DY-T1-E3

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 30V 8A 8SO
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 8A 3.6W, 2.8W ...
DataSheet: SI4276DY-T1-E3 datasheetSI4276DY-T1-E3 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.37935
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Base Part Number: SI4276
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.6W, 2.8W
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI4276DY-T1-E3 is a N-channel enhancement-mode ESD-Protected Array from Vishay Siliconix. It is a unique device that provides ESD protection capability as required by the telecommunications industry. It is suitable for protection in portable cellular phones, RF circuits, and other consumer electronics. The SI4276DY-T1-E3 is designed to withstand up to 3kV Human Body Model (HBM) ESD strikes, which is the most stringent ESD protocol.

The SI4276DY-T1-E3 offers a combination of ESD clamping and ultra-low on-resistance (2 ohms maximum) to protect data lines in portable and consumer digital applications. The increased ESD protection capability also improves system reliability. As an added benefit, the SI4276DY-T1-E3 can be used as an EOS (electrostatic discharge) suppressor with a no visible-damage rating to IEC 61000-4-2 for any common mode or different mode transients.

The SI4276DY-T1-E3 is ideal for a wide range of telecommunication applications that require high ESD protection capability. The device provides high performance, low voltage, flexible design, high levels of immunity and ESD protection, and is easy to implement. It also features high ESD protection of up to 20kV contact discharge ESD on all pins, low insertion loss and low parasitic capacitance.

The working principle of the SI4276DY-T1-E3 is based on the well-known voltage skyhook technique. The Skyhook technique ensures low clamping voltage during an ESD pulse, for protection of data lines. This is achieved by placing a pair of diodes in parallel with the ESD protection device. During ESD events, the diodes become forward biased and share the ESD current, resulting in a lower peak voltage across the ESD protection device. The diodes also act as a voltage `clamper\' to the device when the voltage is exceeded, thereby providing a lower clamping voltage to the device.

The SI4276DY-T1-E3 is a versatile and reliable device that is suitable for use in a wide range of applications. It is a highly-integrated ESD protection solution that provides maximum ESD protection as well as high EOS immunity. The device is designed to provide superior performance, high-voltage protection, and a low clamping voltage that allows for safe operation of data lines. It also features low parasitic capacitance and a low on-resistance, which helps to improve the signal integrity of the system.

The specific data is subject to PDF, and the above content is for reference

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