SI8415DB-T1-E1

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The SI8415DB-T1-E1 is a semiconductor device from the family of transistors, field-effect transistors (FETs), and Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs). It is singled out from the general family, or in other words, it is a MOSFET single device. It is a depletion-mode MOSFET, belonging to a series of fifteen products, ranging from 10V to 100V, released by Siliconix in 1986. It was Intel’s first commercial depletion-mode FETs.

The SI8415DB-T1-E1 is a favorable microelectronic device with many features what set itself apart from the competition. The smallest size MOSFET in the series comes with a hFE of 10,000 gate-to-source resistance of 10 Ohms, common-source drain and gate capacitances of 50pF, and turn-on threshold voltage of 1.3V. The device exhibits a low 5µA on-state drain current.

Thanks to these excellent parameters, the SI8415DB-T1-E1 device is suitable for high-voltage and digital integrated circuits, high-frequency amplifiers, power and interface supplies, switching VRMs and numerous other switching applications. The FET also has compatibility with Intel’s first commercial depletion-mode FETs, making it a choice for multi-voltage logic systems. It is most commonly employed in logic circuits, especially in the input stage of logic inverters.

The SI8415DB-T1-E1’s working principle starts with an initial electrical field, produced between its two layers, known as the gate and the source. It then allows electricity to pass through it (creating a conduction) or prevents electricity from passing through it (creating an insulation). The device’s characteristic depends on whether it is an N-channel or P-channel type, meaning that the electron density of minority carriers can increase or decrease around the oxide layer of the device, shifting its internal electric charge, which will affect the conduction. This process can be controlled by an external voltage source.

The SI8415DB-T1-E1 can be easily connected in any circuit. It is advantageous due to its compatibility with a broad range of applications. As such, this MOSFET single device is suitable for most power electronics designs.

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