SI8461DB-T2-E1 Discrete Semiconductor Products

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The SI8461DB-T2-E1 is a type of insulated-gate field-effect (IGFET) transistor built to endure in highly demanding environments and applications. Also known as a metal-oxide-semiconductor field-effect transistor (MOSFET), the SI8461DB-T2-E1 is one of the most popular types of field-effect transistors. In terms of technical specifications, the SI8461DB-T2-E1 most notably measures a total temperature range of -55°C to 150°C, a drain-source voltage of 200 V and a low on-resistance of 125 mΩ at a specific 4.5 V gate-to-source voltage.

The SI8461DB-T2-E1 is characterized as a single device, meaning that it is made with a single gate and source connection. In addition, these transistors also feature high-speed switching abilities, as well as high-temperature operation. When it comes to its practical uses, the SI8461DB-T2-E1 is often employed in the fields of power management and industrial control. Specifically, the transistor is commonly used in high-power drives, motor controllers, and smart power switches.

Among its other major uses, the SI8461DB-T2-E1 is also renowned for its protection and safety functionalities. For example, the transistor works to prevent power surges, overvoltage, and current overload situations, making it a reliable tool for safeguarding electronic devices and systems. Additionally, the device can also be found guarding against lightning strikes and ESD (electrostatic discharge) events.

The SI8461DB-T2-E1 works on the concept of an insulated-gate field-effect transistor, in which a voltage on the gate governs the current passing through the drain and source contacts. When a positive charge is placed on the gate lead, it produces an electric field, shifting the positions of the electrons at the metal-oxide interface that functions as the channel for the current. In summary, the magnitude of the channel current, in response to the gate voltage, is what is known as the transistor\'s transconductance, described by the device\'s gm parameter.

Another measure of the transistor\'s performance is its voltage gain, referred to as a device\'s mutual conductance (gfs). In the case of the SI8461DB-T2-E1, this particular transistor type consistently offers an excellent voltage gain potential over the entire temperature range of -55°C to 150°C. Moreover, the combination of its on-resistance, voltage gain, and high speed switching makes the device perfectly suited for use in all manner of power management and switching applications, from motor controllers to smart power switches.

Overall, the SI8461DB-T2-E1 is a reliable insulated-gate field-effect transistor that is specialized for use in a wide range of power management, industrial control, and safety/protection applications. Thanks to its low on-resistance and excellent voltage gain, as well as its wide temperature range, the SI8461DB-T2-E1 makes an ideal choice for any project that needs a high-performance, single device field-effect transistor.

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