SI8425DB-T1-E1 Discrete Semiconductor Products

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The SI8425DB-T1-E1 is an n-channel Enhancement-Mode Vertical DMOS transistor. It has been specifically designed and is optimized for use in space-constrained power MOSFET applications, particularly for DC-to-DC converters and general purpose switching applications. It is built using a process that combines vertical DMOS technology with optimized low gate charge CMOS gate drive circuitry housed in a package designed for optimal thermal performance.

The SI8425DB-T1-E1 is an ideal solution for applications requiring both a low on-resistance (RDS(on)) and low gate capacitance (Cg). Its versatile and innovative design makes it a suitable choice for designs which require both high efficiency and low switching losses. The SI8425DB-T1-E1 provides high-performance features in a very compact package, thus reducing component count and simplifying board layout.

This device has a static drain-source on resistance of 50 mΩ max @ VGS = 4.5 V and of 110 mΩ max @ VGS = 2.5 V. It has a drain-source breakdown voltage of 60 V, a maximum operating temperature of 175°C and a maximum VGS (gate-source voltage) of +/- 8.0V. The SI8425DB-T1-E1 is available in the standard TO-252 package and the ultra-small SOT323-5 package.

The SI8425DB-T1-E1 is suitable for use in a wide range of applications and is particularly well suited for use in DC-to-DC converters and general purpose switching, where low gate charge, low on-resistance, and improved EMI performance are needed. This device is also suitable for applications that require a very low on-resistance and high power handling capability, such as in the control of motors, home appliance controls, and industrial automation systems.

The working principle of a SI8425DB-T1-E1 is based on the characteristics of an n-channel enhancement-mode vertical DMOS transistor. The main characteristics of a DMOS are its low RDS(on), and fast switching characteristics. The underlying technology is based on a vertical N-channel that has a low parasitic capacitance between the drain and the gate, resulting in a very low gate charge and low switching losses. The working principle of the SI8425DB-T1-E1 is based on a vertical DMOS coupled with optimized CMOS gate drive circuitry, which provides superior performance and ease of use. The device uses a built-in protective Zener diode to reduce stress on the drain and source pins and to enhance the EMI performance of the device.

The SI8425DB-T1-E1 is a powerful and versatile device that provides excellent performance in DC-to-DC converters, general purpose switching, home appliance control, and industrial automation systems. It combines the advantages of a vertical DMOS with low parasitic capacitance with optimized CMOS gate drive circuitry in a very compact package, making it an ideal solution for space-constrained applications that require an extremely low on-resistance and high power handling capability.

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