SIHU2N80E-GE3

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package:	IPAK (TO-251)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	62.5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	315pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	19.6nC @ 10V
Series:	E
Rds On (Max) @ Id, Vgs:	2.75 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.8A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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SIHU2N80E-GE3 Application Field and Working Principle

The SIHU2N80E-GE3 is a discrete, silicon-based, enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) that is mostly used in the electronics industry as a switching device. It is a popular choice among electrical engineers because of its relatively affordable cost, low on-resistance (the amount of electrical current that is allowed to pass when the switch is “on”) and moderate total system power dissipation.

A MOSFET is an electronic device that operates by controlling the flow of electrical current between a source and a drain terminal using the “gate” terminal. It allows the current to be controlled in a circuit with an extremely low control voltage, unlike other discrete devices such as triodes or transistors. It is also known for being highly-efficient in terms of power consumption and can support switching frequencies of up to 100 MHz.

Amplification is the process by which an output current is proportional to the input current. Amplification is achieved by the gate\'s control over the current flowing from the source terminal to the drain terminal. When the voltage applied to the gate is a positive voltage, the MOSFET operates in enhancement mode and allows electrical current to flow between the source and drain. When the gate voltage is at zero volts or is a negative voltage, the MOSFET is said to be in depletion mode and no current can flow.

The SIHU2N80E-GE3 is a unique device in that it operates in both enhancement and depletion modes, thanks to its unique design. This feature is important because it enables the device to be used in a variety of applications including power management, switching, and linear operations. It is also particularly useful in high-side and low-side switching operations, as it allows for greater control and accuracy when controlling current.

The SIHU2N80E-GE3 also features a wide operating temperature range, a maximum on-resistance of 0.076 ohms, and a maximum current rating of 8 amps. Its low on-resistance is especially important, as it ensures that current dissipates quickly and efficiently, leading to increased power savings, reliability, and system performance.

The SIHU2N80E-GE3 is a highly-capable device and is ideal for switching applications in a wide range of fields. It is especially useful in automotive, power management, industrial, and consumer electronics applications, as it offers reliable switching performance, low on-resistance, and good heat dissipation. Its performance characteristics, coupled with its wide operating temperature range and low cost make it an attractive option for engineers who require a discrete switching device with excellent power management capabilities.

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