SIHU3N50DA-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIHU3N50D-GE3 is a high-speed, trench-gate field-effect transistor (FET) designed for use in high-power applications. It offers superior performance, superior reliability, and superior cost-effectiveness. This device is suitable for use in switching, regulating, and current source applications, and has been tested to meet the highest standards of industry performance, reliability, and safety. This article will discuss the application fields and working principle of the SIHU3N50D-GE3 field-effect transistor.

Application Fields

The SIHU3N50D-GE3 is suitable for use in various high power applications, from power control and switching to motor speed control. It is especially well-suited for applications requiring fast switching speeds and reliable performance. Applications include, but are not limited to, automotive, industrial, telecom, and data center applications. It can also be used for motor drive and solar inverter applications. This device is capable of handling power levels up to 60V and provides excellent on-state current-handling capability. It is also well-suited for applications requiring high efficiency and high frequency operation.

Working Principle

The SIHU3N50D-GE3 is a single-FET device, meaning that it uses a single field-effect transistor (FET) to control current flow and power delivery. The device has a gate-source terminal, which is used to control the current flow through the device by changing the voltage applied to the gate. The device also features a drain-source terminal, which is used to control the output voltage. When a voltage is applied to the gate, it creates a "channel" of electrons between the gate and drain, which allows the current to flow. When the voltage is removed from the gate, the channel is closed, and the current is blocked.

The device uses a trench-gate structure, which provides better performance than traditional MOSFETs devices. This allows the device to operate at higher frequencies than standard MOSFETs. The device also has a lower capacitance and on-resistance than other MOSFETs which results in faster switching speeds and lower energy consumption. The device also offers better thermal resistance due to its low silicon junction temperature. This allows for higher switching speeds to be achieved without sacrificing reliability.

The SIHU3N50D-GE3 can be used in a variety of high power applications, ranging from switching to current source and regulation applications. The device offers exceptional performance and reliability, and is suitable for use in a wide range of applications. The device is capable of handling high current and voltage levels, and can operate at higher frequencies than standard MOSFETs, resulting in improved performance. The device also offers superior thermal resistance and lower energy consumption, making it a cost-effective solution for high-power applications.

The specific data is subject to PDF, and the above content is for reference