SIHU5N50D-GE3

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The SIHU5N50D-GE3 is a single MOSFET designed for use in high power and medium voltage applications, such as servers, consumer electronics, and renewable energy markets. It is important to note that this MOSFET is designed to operate as a depletion-mode device, meaning that it pulls its gate voltage to the drain voltage when no external bias is applied. This device is also well-suited for use in automotive and audio amplifier applications.The SIHU5N50D-GE3 MOSFET utilizes a silicon carbide substrate for power semiconductor solutions, offering a wide range of operating temperature, high breakdown voltage, and low on-resistance. This device is also highly suited for high frequency power applications due to its very small gate charge and fast switching time.

The working principle of the SIHU5N50D-GE3 is simple. Since this device is a depletion-mode MOSFET, it pulls its gate voltage to the drain voltage when no external bias is applied. It is then necessary to apply an external bias to the gate in order to change its threshold voltage, and make it turn on or off.

This device is frequently used in high power and medium voltage applications, such as servers, consumer electronics, automotive, and audio amplifier devices, to name a few. This MOSFET is very capable in regulating and facilitating power flow, switching power off as necessary, as well as offering high impedance in order to perform voltage conversion or step-down/step-up circuits.

The most common applications of the SIHU5N50D-GE3 MOSFET are in high frequency switching, low EMI, low power applications, and power converters for lighting and renewable energy power supplies. The semiconductor grade silicon carbide substrate offers this device a maximum temperature operating range from -55°C to 175°C, which makes it an ideal choice for a variety of industrial and consumer applications.

The excellent combination of characteristics from the SIHU5N50D-GE3 makes it an invaluable powerhouse for building circuit designs for power applications. Its breakdown voltage of 500V, a low threshold voltage of 3V, and low on-resistance of 0.092 Ohms make this device perfectly tailored to ensure excellent performance in applications requiring a high power regulation or switching.

In conclusion, the SIHU5N50D-GE3 is a single MOSFET designed for operating at high power and medium voltage. It is designed to work as a depletion-mode device, drawing its gate voltage to the drain voltage when no external bias is present. This device is ideal for use in high power, high frequency, and low power applications, due to its low on-resistance and fast switching times. Furthermore, its silicon carbide substrate enables it to operate in temperatures from -55°C to 175°C, which makes it usable even in the most extreme conditions.

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