SIHU6N80E-GE3 Allicdata Electronics
Allicdata Part #:

SIHU6N80E-GE3-ND

Manufacturer Part#:

SIHU6N80E-GE3

Price: $ 1.86
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CHAN 800V TO-251
More Detail: N-Channel 800V 5.4A (Tc) 78W (Tc) Through Hole IPA...
DataSheet: SIHU6N80E-GE3 datasheetSIHU6N80E-GE3 Datasheet/PDF
Quantity: 3000
1 +: $ 1.69470
10 +: $ 1.52964
100 +: $ 1.22913
500 +: $ 0.95598
1000 +: $ 0.79210
Stock 3000Can Ship Immediately
$ 1.86
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: IPAK (TO-251)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 78W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
Series: E
Rds On (Max) @ Id, Vgs: 940 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SIHU6N80E-GE3 is a high performance enhancement mode Field Effect Transistor (FET), produced by Siemens. It is designed to function as a high-side switch in an isolated power supply (IPS), such as a power converter, switch-mode power supply, or voltage regulator. It is used for advanced applications such as proportional speed control of DC motors, automatic power sequencing, and power sequencing for telecommunication equipment. This document will discuss the SIHU6N80E-GE3’s application field and working principle.

Application Field

The SIHU6N80E-GE3 is a single N-channel enhancement-mode Field Effect Transistor (FET) designed to improve power supply efficiency. It is ideal for applications that require high power conversion efficiency and low power dissipation. It has a wide range of applications, including DC to AC power conversion, switch-mode power supplies, voltage regulators, power sequencing for telecommunication equipment, proportional speed control of DC motors, and high-side switching in isolated power supplies. It can also be used in automotive systems and a variety of equipment controlled or powered by microprocessors. The device has exceptional performance and features include a fast switching time, low on-resistance and a low threshold voltage. The high switching frequency of the SIHU6N80E-GE3 allows it to be used in power supplies and voltage regulators with high efficiency and low power dissipation.

Working Principle

The SIHU6N80E-GE3 is an enhancement-mode Field Effect Transistor (FET). Under normal conditions, no gate-source voltage is applied and the device is \'off\'. When a gate-source voltage is applied, an electric field is generated between the source and the gate regions, called an inversion layer. This inversion layer allows for current to flow between the source and the drain, thus turning the device \'on\'. The device is designed with a low threshold voltage of 4V, allowing the device to be easily turned on. The device also has a low ON resistance, allowing it to operate at high load currents with low power dissipation.

The main advantages of the SIHU6N80E-GE3 include low on-resistance, fast switching time, low gate-source capacitance, and low gate charge. The low on-resistance allows for high power conversion efficiency and low power dissipation. The device also has a fast switching time, allowing for the power supply to be switched on and off quickly. The low gate-source capacitance ensures low power dissipation, while the low gate charge ensures that the device can be easily turned on or off.

The SIHU6N80E-GE3 is designed to function as a high-side switch in an isolated power supply. It is ideal for applications where a high power conversion efficiency and low power dissipation are required. The device can be used for a wide range of applications, including proportional speed control of DC motors, automatic power sequencing, and power sequencing for telecommunication equipment.

In conclusion, the SIHU6N80E-GE3 is a high performance enhancement-mode N-channel field effect transistor designed to improve power supply efficiency. It is ideal for applications that require fast switching and low power dissipation. The device has excellent performance, with a low on-resistance and a low threshold voltage. The fast switching time and low capacitance characteristics make the device suitable for applications such as DC motor speed control, power sequencing, and voltage regulators.

The specific data is subject to PDF, and the above content is for reference

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