
Allicdata Part #: | SIHU6N80E-GE3-ND |
Manufacturer Part#: |
SIHU6N80E-GE3 |
Price: | $ 1.86 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CHAN 800V TO-251 |
More Detail: | N-Channel 800V 5.4A (Tc) 78W (Tc) Through Hole IPA... |
DataSheet: | ![]() |
Quantity: | 3000 |
1 +: | $ 1.69470 |
10 +: | $ 1.52964 |
100 +: | $ 1.22913 |
500 +: | $ 0.95598 |
1000 +: | $ 0.79210 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Long Leads, IPak, TO-251AB |
Supplier Device Package: | IPAK (TO-251) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 78W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 827pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Series: | E |
Rds On (Max) @ Id, Vgs: | 940 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The SIHU6N80E-GE3 is a high performance enhancement mode Field Effect Transistor (FET), produced by Siemens. It is designed to function as a high-side switch in an isolated power supply (IPS), such as a power converter, switch-mode power supply, or voltage regulator. It is used for advanced applications such as proportional speed control of DC motors, automatic power sequencing, and power sequencing for telecommunication equipment. This document will discuss the SIHU6N80E-GE3’s application field and working principle.
Application Field
The SIHU6N80E-GE3 is a single N-channel enhancement-mode Field Effect Transistor (FET) designed to improve power supply efficiency. It is ideal for applications that require high power conversion efficiency and low power dissipation. It has a wide range of applications, including DC to AC power conversion, switch-mode power supplies, voltage regulators, power sequencing for telecommunication equipment, proportional speed control of DC motors, and high-side switching in isolated power supplies. It can also be used in automotive systems and a variety of equipment controlled or powered by microprocessors. The device has exceptional performance and features include a fast switching time, low on-resistance and a low threshold voltage. The high switching frequency of the SIHU6N80E-GE3 allows it to be used in power supplies and voltage regulators with high efficiency and low power dissipation.
Working Principle
The SIHU6N80E-GE3 is an enhancement-mode Field Effect Transistor (FET). Under normal conditions, no gate-source voltage is applied and the device is \'off\'. When a gate-source voltage is applied, an electric field is generated between the source and the gate regions, called an inversion layer. This inversion layer allows for current to flow between the source and the drain, thus turning the device \'on\'. The device is designed with a low threshold voltage of 4V, allowing the device to be easily turned on. The device also has a low ON resistance, allowing it to operate at high load currents with low power dissipation.
The main advantages of the SIHU6N80E-GE3 include low on-resistance, fast switching time, low gate-source capacitance, and low gate charge. The low on-resistance allows for high power conversion efficiency and low power dissipation. The device also has a fast switching time, allowing for the power supply to be switched on and off quickly. The low gate-source capacitance ensures low power dissipation, while the low gate charge ensures that the device can be easily turned on or off.
The SIHU6N80E-GE3 is designed to function as a high-side switch in an isolated power supply. It is ideal for applications where a high power conversion efficiency and low power dissipation are required. The device can be used for a wide range of applications, including proportional speed control of DC motors, automatic power sequencing, and power sequencing for telecommunication equipment.
In conclusion, the SIHU6N80E-GE3 is a high performance enhancement-mode N-channel field effect transistor designed to improve power supply efficiency. It is ideal for applications that require fast switching and low power dissipation. The device has excellent performance, with a low on-resistance and a low threshold voltage. The fast switching time and low capacitance characteristics make the device suitable for applications such as DC motor speed control, power sequencing, and voltage regulators.
The specific data is subject to PDF, and the above content is for reference
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