SIHU6N62E-GE3

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	IPAK (TO-251)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	78W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	578pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	34nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	900 mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drain to Source Voltage (Vdss):	620V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIHU6N62E-GE3 is a single N-channel enhancement mode MOSFET. It was designed using advanced trench technology, which offers the device low on-resistance while minimizing the gate charge and input capacitance. The gate threshold voltage is also set to a minimum, providing optimal switching performance. The device is capable of withstanding a maximum voltage of 65V, making it suitable for use in a variety of applications.

Application field

The SIHU6N62E-GE3 is a popular device used in a variety of power management applications. It can be used as a switch in power supply, DC-DC converter, motor driver, and motor control applications. It is also widely used in lighting controls and other industrial applications. Additionally, the device can be used to regulate voltage and current in battery protection circuits, LED drivers, and current limiter circuits.

Working principle

A MOSFET is a field-effect transistor that uses an electric field to control the flow of electric current. The SIHU6N62E-GE3 is an enhancement mode device, meaning that the MOSFET is switched on when a voltage is applied to the gate terminal and off when the voltage is removed. This makes the device suitable for use in power management applications as it can quickly and efficiently switch on and off. The device works by having two metal oxide layers. The first layer is a source and the second layer is a drain. When a voltage is applied to the gate it creates an electric field between these two layers. This electric field creates a conductive channel between the source and drain, allowing current to flow. When the voltage is removed from the gate, the electric field is also removed and the conductive channel closes, preventing current flow.

Conclusion

The SIHU6N62E-GE3 is a single N-channel enhancement mode MOSFET that is ideal for a variety of power management applications. It is capable of withstanding a maximum voltage of 65V, making it suitable for use in many different applications. The device utilizes an electric field to control current flow, making it an efficient switch. Overall, the SIHU6N62E-GE3 is a versatile and reliable device that is used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description