SIHU3N50D-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIHU3N50D-GE3 is a type of transistor, a field-effect transistor (FET) with a single-gate, MOSFET structure. In general, a transistor is a type of semi-conductive material that can act as an amplifier, switch, or interrupt. FETs are field-effect transistors that contain a gate region between the source and drain electrodes and operate on the principle of controlling current flow with an applied electric field. The SIHU3N50D-GE3 is a specific type of FET, a MOSFET, that is characterized by its single-gate construction.The SIHU3N50D-GE3 has a variety of applications and is a versatile transistor. It can be used in power control applications, such as in motor speed control, battery chargers, and solenoid control. It can also be used in audio amplifiers and digital logic circuits, as well as digital-to-analog (D/A) and analog-to-digital (A/D) converters. It can also be used in data communications and radio frequency (RF) systems.The working principle of the SIHU3N50D-GE3 is based on the gate-source voltage (Vgs) input. This voltage input determines the current flow through the FET. When a voltage is applied to the gate, a small electric field is created. This electric field modulates the electric charge in the channel region at the interface between the source and drain regions. This channel region is now able to control the current flow, allowing the overall conductivity of the device to be modulated.The SIHU3N50D-GE3\'s single-gate structure allows the transistor to be much more resistant to electrical noise such as RF signals and other electronic interference. This makes the SIHU3N50D-GE3 ideal for use in environments where EMI (electromagnetic interference) is a concern. It is also more efficient than traditional FETs, consuming less power when under operation.The SIHU3N50D-GE3 is a versatile, efficient, and powerful transistor that has a variety of applications. It can be used in power control, audio amplifiers, digital logic, D/A and A/D converters, data communications and RF systems. Its single-gate construction makes it more resistant to electrical noise, making it suitable for environments where EMI is a concern. The working principle of the SIHU3N50D-GE3 is based on the gate-source voltage input, which determines the current flow through the FET. By modulating the electric charge in the channel region at the interface between the source and drain regions, the current flow of the transistor can be controlled.

The specific data is subject to PDF, and the above content is for reference