SKI03036 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.5V @ 650µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	90W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2460pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	38.8nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3.7 mOhm @ 57A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SKI03036 Application Field and Working Principle

The SKI03036 is a silicon N-Channel MOSFET designed to be used in various applications requiring switching and transmission of low voltage, low current, and low power signals. It is a power MOSFET with an optimized structure that provides efficient operation with fast switching times and low RDS(on) values. This article will discuss the application field and working principle of the SKI03036.

Application Field

The SKI03036 can be used in a wide variety of applications where low voltage, low current, and low power signals need to be switched or transmitted. It is a single N-channel MOSFET which can be used to switch several application inputs and outputs. Examples include low voltage signal relays, electronic circuits for sound, limit switches, and signal processors. The low rDS(on) value of the SKI03036 combined with its fast switching speed makes it an ideal choice for these applications. In addition, the SKI03036 is also suitable for use in high frequency switching applications. This is due to its low parasitic capacitance which allows it to operate at higher frequencies without degrading its performance. Furthermore, the SKI03036’s static drain-source ON-resistance is low enough to enable it to handle high di/dt noise pulses caused by high switching frequencies. The SKI03036 is also well-suited for switching automotive and motor control applications. It is designed to meet the latest AEC-Q101 standards, which certify that it is suitable for use in automotive electronics. Its low Vgs threshold makes it suitable for switching battery powered applications, and its low rDS(on) ensures efficient operation of electric motors.

Working Principle

The SKI03036 is a silicon N-Channel MOSFET, which means that it utilizes a substrate composed of a P-type material surrounded by an N-type material. This basic structure allows for the device to be electrically insulated from the rest of the circuit, allowing for the efficient switching of low voltage and current signals. When the gate of the MOSFET is supplied with a positive voltage, it creates an electric field which causes current to flow along the channel. This causes a channel band to form between the source and the drain, allowing for current to flow in one direction. The size of the channel can be controlled by adjusting the gate voltage. When the gate voltage is increased, the channel width increases, allowing more current to flow and resulting in a lower rDS(on). The SKI03036 also has several additional features which enhance its performance, including a maximum drain-source voltage rating of 30V, a maximum drain current rating of 6A, a low gate-source voltage of 0.8V, and a maximum junction temperature of 175°C.

Conclusion

The SKI03036 is a silicon N-Channel MOSFET which is well-suited for low voltage and low current applications requiring fast switching times and low RDS(on) values. It has been designed to meet the latest AEC-Q101 standards and can be used in a variety of automotive, motor control, and battery powered applications. Furthermore, it also has low parasitic capacitance which makes it suitable for high frequency switching applications.

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