SKI07114 Allicdata Electronics

SKI07114 Discrete Semiconductor Products

Allicdata Part #:

SKI07114TR-ND

Manufacturer Part#:

SKI07114

Price: $ 0.54
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: MOSFET N-CH 75V 62A TO-263
More Detail: N-Channel 75V 62A (Tc) 116W (Tc) Surface Mount TO-...
DataSheet: SKI07114 datasheetSKI07114 Datasheet/PDF
Quantity: 4800
800 +: $ 0.49310
Stock 4800Can Ship Immediately
$ 0.54
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 116W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 31.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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SKI07114 is a type of single field effect transistor (FET), more specifically ametal-oxide-semiconductor field-effect transistor (MOSFET). Like all FETs, SKI07114 employs an electric field rather than a current or a voltage to control the flow of electric current through a channel between source and drain, acting as a switch for a circuit. This is useful for the design of various circuits, such as on a printed circuit board.

The construction of an SKI07114 is similar to other MOSFETs and is composed of three terminals that supply a voltage potential to control the flow of current, namely source, gate, and drain. The source terminal is the negative side of the FET, the drain terminal is the positive side and the gate terminal is the output terminal. This arrangement is similar to typical FETs, but differs significantly in that the gate of the SKI07114 is not connected to any capacitors or mechanical parts.

Unlike conventional MOSFETs, the gate of the SKI07114 is composed of two metal oxide layers arranged in a way that allows for a large channel of current to flow between the source and the drain. The gate terminal is responsible for controlling the channel and is where the major difference lies. The gate of the SKI07114 has a metal-insulator-semiconductor (MIS) structure that when a voltage is applied across it, changes its electrical properties. As the voltage applied to the MIS gate increases, the resistance between the source and the drain decreases.

The primary applications of SKI07114 MOSFETs are for power switching circuits, voltage regulator circuits and amplifiers. In power switching circuits, the field effect transistor (FET) is used to switch large amounts of current with a low voltage. For example, in a DC-DC converter, a FET is used as a main switch to provide the necessary current switching capability. In voltage regulator circuits, the FET can be used to regulate the voltage output of a circuit by varying its resistance. This can be particularly useful in applications such as laptop computers and mobile phones, where different voltage components need to be regulated efficiently.

The SKI07114 is used as an amplifier because of its superior characteristics. It can provide a high gain with a low amount of distortion compared to other MOSFETs, making it an ideal choice for applications that require a high level of amplification accuracy. This makes it the preferred choice of amplifier designers, since it provides the highest quality of sound reproducing capabilities.

The working principle of an SKI07114 is simple. When the voltage potential is applied to the gate terminal, it changes the resistivity of the channel between the source and the drain. As the voltage potential increases, the resistance decreases and current is allowed to flow more freely. This changes allows the FET to act as a switch or amplifier, depending on the application.

In conclusion, the SKI07114 is a field effect transistor of the MOSFET variety that is used extensively in various applications, such as power switching, voltage regulator circuits and amplifiers. Its ability to control the flow of current through a channel between source and drain, with a low voltage applied to the gate terminal, makes it one of the most popular FETs for various circuits. Its superior characteristics make it an ideal choice for amplitude accurate amplifiers, making it the preferred choice for applications that require a high level of accuracy.

The specific data is subject to PDF, and the above content is for reference

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