SKI06048 Allicdata Electronics

SKI06048 Discrete Semiconductor Products

Allicdata Part #:

SKI06048TR-ND

Manufacturer Part#:

SKI06048

Price: $ 0.60
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: MOSFET N-CH 60V 85A TO-263
More Detail: N-Channel 60V 85A (Tc) 135W (Tc) Surface Mount TO-...
DataSheet: SKI06048 datasheetSKI06048 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.53794
Stock 1000Can Ship Immediately
$ 0.6
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 135W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6210pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90.6nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 55A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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SKI06048 is a type of transistor constructed with a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), a single-gate device. It is a type of power semiconductor used to control the voltage, current, and resistance levels between the two terminals of the semiconductor. MOSFETs are semiconductor elements made of two layers of conductive material with a gate in between. A MOSFET is designed to control the flow of current to two different terminals, which are called source and drain. The gate acts like a switch; when it is in the open position, no current will flow through the device and when it is in the closed position, current will flow from the source to the drain.

The SKI06048 is unique among MOSFETs in that it is designed specifically for applications where very low input impedance is required and where a very low on-resistance is desired. It is ideal for applications where the operating current is required to be precisely controlled. It is used in low-voltage, low-current power solutions, such as those found in consumer electronics, computers, and other consumer and industrial applications. Additionally, the SKI06048 is suitable for use in switch-mode power supplies, DC-DC converters, and other safety and industrial automation applications.

The working principle of the SKI06048 follows the same basic principles as other MOSFETs. The behavior of the device is characterized by its electrical properties, such as the drain-source resistance and threshold voltage. When a voltage source is applied to the gate of the device, the application of a voltage causes a current to flow in the channel between the source and drain. When the on-resistance is low, the current flowing through the channel is more efficient, allowing more power to be transferred, and allowing more precise control. Additionally, when a low resistance is used, the power dissipation of the device is also reduced, making it more suitable for use in portable and low power devices.

The SKI06048 has a variety of features that make it suitable for a range of applications. It is designed with a high efficiency which provides a product with a small form factor, allowing it to fit in small areas. Additionally, it has a high on-resistance, making it ideal for controlling a large current or power. The device also has a low gate-source capacitance, allowing it to operate at higher frequencies and for faster switching speeds. Finally, the device has a low leakage current, which allows it to operate in low power systems.

In summary, the SKI06048 is a type of power semiconductor device constructed with a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). It is a single-gate device with a unique design that allows it to have very low input impedance and low on-resistance levels. It is used in a variety of applications, such as consumer electronics, computers, safety and industrial automation, as well as switch-mode power supplies and DC-DC converters. The device\'s features make it ideal for these applications; its low leakage current, low gate-source capacitance, and high on-resistance allow for precise voltage and current control, as well as high efficiency and a small form factor.

The specific data is subject to PDF, and the above content is for reference

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