SKI07074 Allicdata Electronics

SKI07074 Discrete Semiconductor Products

Allicdata Part #:

SKI07074TR-ND

Manufacturer Part#:

SKI07074

Price: $ 0.60
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: MOSFET N-CH 75V 85A TO-263
More Detail: N-Channel 75V 85A (Tc) 135W (Tc) Surface Mount TO-...
DataSheet: SKI07074 datasheetSKI07074 Datasheet/PDF
Quantity: 1000
4000 +: $ 0.53794
Stock 1000Can Ship Immediately
$ 0.6
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6340pF @ 25V
FET Feature: --
Power Dissipation (Max): 135W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

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SKI07074 transistors are part of the field effect transistor (FET) family and are commonly used in digital and power electronics applications. The device is a n-type MOSFET with a drain-source breakdown voltage of 400V. The device is a single gate type FET and is designed to handle currents up to 2A. The gate-source voltage of the device is 4V, with a rated power dissipation of 1.5W.

The working principle of SKI07074 is based on the fact that the channel between the drain and source will only conduct current when a voltage is applied to the gate terminal, thus controlling the resistance between drain and source. When the gate voltage is higher than the threshold voltage, the MOSFET is turned ON, i.e., the drain can be connected to the source, consequently allowing current to flow freely between drain and source.

When the gate voltage is greater than the threshold voltage, the resistance between drain and source drops and the device behaves as a linear resistor. Consequently, any change in the drain-source voltage will cause the current between drain and source to change proportionally and this change could be used to amplify or switch signals. When the gate voltage is reduced to a level lower than the threshold voltage, no current will flow through the device, thus making it behave as an open switch.

In digital electronics applications, SKI07074 is commonly used as a switch and amplifier. The device is usually connected between the source and the load and its gate can be used to control the flow of current through the load. This is done by applying a high voltage to the gate terminal, which will cause the drain and source terminals to be connected and allow current to flow through the load.

In power electronic applications, SKI07074 is often used as a power switch that can control large currents. They are usually connected between the source and the load and the gate is used to control the power applied to the load. The device is capable of handling voltages of up to 400V and is able to switch currents up to 2A.

SKI07074 is an important FET device due to its ability to control large currents. It is commonly used as a switch or amplifier in digital and power electronics applications. The device has a breakdown voltage of 400V, a gate-source voltage of 4V, and is capable of handling currents up to 2A. Its working principle is based on the fact that when the gate voltage is greater than the threshold voltage, the device behaves as a linear resistor, and when the gate voltage is lowered to a level lower than the threshold voltage the device behaves as an open switch. As such, SKI07074 is a versatile and powerful FET device that can be used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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