SKI04024 Discrete Semiconductor Products |
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Allicdata Part #: | SKI04024TR-ND |
Manufacturer Part#: |
SKI04024 |
Price: | $ 0.60 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET N-CH 40V 85A TO-263 |
More Detail: | N-Channel 40V 85A (Tc) 135W (Tc) Surface Mount TO-... |
DataSheet: | SKI04024 Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.53794 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3 mOhm @ 82.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 97.6nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6200pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 135W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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SKI04024 is a single DMOS field-effect transistor that provides high current density, a variety of packages and low gate charge. This particular field-effect transistor is designed for high power output stages that require low gate charge, a fast switch-off, and a low output capacitance. Additionally, it has been designed for applications requiring a high dynamic switching characteristic. Because of this, the SKI04024 can be found in a variety of places, including in power control devices, such as automotive, industrial, and consumer applications.
At a high level, DMOS field-effect transistors are specialized transistors that use an oxide layer, usually silicon oxide, as an insulator and in order to allow the transistor to control the voltage of the collector to the emitter. In this case, the SKI04024 uses a process in which the gate “floats” over a silicon dioxide layer that has been oxidized in order to reduce leakage and increase the device’s reliability. This gives the SKI04024 a unique high-level output, which allows for its use in a number of power control applications.
The working principle of the SKI04024 is quite simple. A voltage change on the gate controls the flow of the current through the channels and between the drain and the source. The voltage across the gate is provided by an external power supply and is usually proportional to the current that is needed to be controlled. When the gate voltage is high, the drain current flows, and when the gate voltage is low, the drain current is reduced.
The SKI04024 is specifically designed to be used in high power output stages, and to that end, offers additional features over standard transistors. This includes the ability to maintain low gate charge, fast switch-off, and a low output capacitance. These features allow for a high dynamic switching characteristic, which makes them ideal for use in power control applications. Additionally, it has a small reverse transfer capacitance, which helps to reduce the amount of energy transferred from source to drain, leading to higher efficiency.
Overall, the SKI04024 is a powerful single DMOS field-effect transistor. It offers a variety of packages and is designed to be used in high power output stages. Its low gate charge, fast switch-off, and low output capacitance make it ideal for use in power control applications. The working principle of the SKI04024 is also easy to understand, as it relies on the voltage change on the gate to control the flow of current. All of these features make it an excellent choice for a number of power applications.
The specific data is subject to PDF, and the above content is for reference
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