SKI03087 Discrete Semiconductor Products

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The SKI03087 is a Field-Effect Transistor (FET) that belongs to a family of semiconductor devices classified as insulated gate bipolar transistors (IGBTs). It can be used in many applications that require excellent switch properties, such as in motor control and power conversion.

The SKI03087 is designed to operate with low gate current, which enables the user to reduce their power-supply requirements, providing a more efficient and reliable solution than when using other types of devices. Because the lower gate current minimizes power losses, it can also reduce the thermal stress on the system. It also minimizes switching noise, making it quieter than other devices. Additionally, the device can be easily programmed for specific performance needs.

The SKI03087 has a single insulated gate, which is protected from static electricity, and a series of N-type source and drain regions that are connected. In terms of electrical characteristics, the device has a drain-source voltage rating of 30 volts (VDS) and a drain current rating of 250 milliamps (mA). It also has an operating temperature range of -55°C to +125°C.

The working principle of the SKI03087 is based on the operation of a FET. The gate is the control terminal of the device, which is connected to a power supply. When a voltage is applied to the gate, it modifies the electric field in the channel between the source and the drain, thus modulating the conduction of current. The higher the voltage applied to the gate, the greater the conduction in the channel.

The SKI03087 has excellent switching properties and it can be used in many electronic applications including power switching, pulse generation, temperature measurement and motor control. It is also commonly used in power supplies and DC-DC converters. Additionally, it can be used in circuits to regulate the output of an audio amplifier.

The SKI03087 is designed to provide reliable switching performance, making it a viable alternative to higher-voltage, normally-on FETs. It can also be used in applications that require higher switching capabilities, such as high-current motor control. Additionally, the device has a low gate-drive power demand and can be used in battery-powered applications.

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