SPA08N80C3XKSA1

Vgs(th) (Max) @ Id:	3.9V @ 470µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	PG-TO220-FP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1100pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	60nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	650 mOhm @ 5.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

The SPA08N80C3XKSA1 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which is an electronic component utilized to amplify or switch electronic signal by using an applied voltage. It is a single transistor that is commonly used in amplifying and switching applications. The SPA08N80C3XKSA1 is utilized in numerous consumer, industrial, and test and measurement applications.

Application Field

The SPA08N80C3XKSA1 is designed for a variety of consumer, industrial and test and measurement applications. Common consumer applications include motor drives, consumer electronics and lighting. In industrial applications, the SPA08N80C3XKSA1 can be used in motor control, power conversion and power transmission. It is also utilized in test and measurement equipment for test, model and simulation purposes.

Working Principle

The SPA08N80C3XKSA1 is a voltage-controlled device. It operates by allowing an external gate voltage to control the flow of current through a source and a drain. When an electric charge is applied to the gate terminal, it creates an electrostatic field within the MOSFET substrate which attracts mobile electrons to the gate. The amount of mobile electrons at the gate is directly proportional to the gate voltage, allowing the voltage to control the current flow between the source and the drain. As a result, the SPA08N80C3XKSA1 can be used to amplify or switch electronic signals.

Advantages

The SPA08N80C3XKSA1 is highly efficient and provides excellent performance due to its low on-resistance and low gate charge. This makes it suitable for use in high-power applications, as it can handle large currents efficiently and with greater accuracy. Additionally, the SPA08N80C3XKSA1 offers a wide range of temperature stability, making it suitable for use in a variety of temperature environments.

Conclusion

The SPA08N80C3XKSA1 is a single MOSFET device designed for use in a variety of consumer, industrial and test and measurement applications. It operates using a voltage-controlled principle, where an external gate voltage is used to control the flow of current between a source and a drain. This makes it ideal for use in amplifying and switching applications, as well as high-power applications. The SPA08N80C3XKSA1 is also highly efficient and provides excellent performance due to its low on-resistance and low gate charge, making it an ideal choice for a wide range of applications.

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