SPD30N03S2L-20 Allicdata Electronics
Allicdata Part #:

SPD30N03S2L20INTR-ND

Manufacturer Part#:

SPD30N03S2L-20

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 30A DPAK
More Detail: N-Channel 30V 30A (Tc) 60W (Tc) Surface Mount PG-T...
DataSheet: SPD30N03S2L-20 datasheetSPD30N03S2L-20 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Series: OptiMOS™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2V @ 23µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
FET Feature: --
Description

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The SPD30N03S2L-20 is a P-channel Insulated Gate Bipolar Transistor (IGBT) made by STMicroelectronics. It is a three-terminal Power MOSFET that provides fast switching against comparatively low on-state resistance (RDS(on)). This can make it a good choice for high performance applications requiring fast switching, such as power control. It is also suitable for switched-mode power supply (SMPS) applications.

The SPD30N03S2L-20 was designed for use in SMPS, solar power inverter, Uninterruptible Power Supplies (UPS), and motor control applications. Operating in the low-voltage range, it offers improved efficiency due to its low conduction loss in both the on and off states. It also has a fast switching speed, enabling better dynamic control.

The SPD30N03S2L-20 features a voltage rating of 30V and a drain to source breakdown voltage (BVDSS) of 30V. It offers a maximum current capability of 2.5A, an on-state resistance of 0.11Ω, an off-state design voltage of 6V, and a maximum junction temperature of 175°C.

The SPD30N03S2L-20 has a P-channel structure and its static behavior is that of a standard metall oxide semiconductor field-effect transistor (MOSFET). The gate voltage controls the current passing through the drain and source. In the on state, applying a positive gate voltage causes the gate oxide to become reverse biased, allowing holes from the source to flow to the drain. This creates a low resistance path between the drain and the source and allows current to flow.

When in the off state, no current flows between the drain and the source, even when the same gate voltage is applied. This is because the gate oxide becomes forward biased, blocking the electrons that would otherwise be flowing from the drain to the source. In this state, the voltage between drain and source is known as the threshold voltage.

The SPD30N03S2L-20 has ESD protection, allowing it to withstand electrostatic discharges up to 4kV. Additionally, it has a lower gate charge and a faster switching time, which enable it to provide superior performance. The SPD30N03S2L-20 is also suitable for bidirectional current flow and frequency switching.

Overall, the SPD30N03S2L-20 offers fast switching speed, good current handling capability, ESD protection, and low on-state resistance. This makes it a suitable choice for fast switching applications, such as power control and SMPS.

The specific data is subject to PDF, and the above content is for reference

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