Allicdata Part #: | SPD30N03S2L07GBTMA1TR-ND |
Manufacturer Part#: |
SPD30N03S2L07GBTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 30A TO252-3 |
More Detail: | N-Channel 30V 30A (Tc) 136W (Tc) Surface Mount PG-... |
DataSheet: | SPD30N03S2L07GBTMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6.7 mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 85µA |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2530pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 136W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
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SPD30N03S2L07GBTMA1 is a widely used and popular transistor within the FETs (Field-Effect Transistors) and MOSFETS (Metal-Oxide-Semiconductor FETs) category. It is a sub-category within this range, classified as a single transistor. It is represented by a P-channel type, 30V source to drain voltage, designed with low-on-resistance and high-frequency switchiing capabilities.
The transistor uses the common source configuration, meaning that it works by second-harmonic distortion suppression (SDHS), where it has a high-impedance gate. As with most transistors, the gate is insulated from the connection that it is regulating, so that the amount of charge travelling between them is limited and does not become too great.
In order to do its job, the gate must remain at a certain voltage, so that the semiconductor between source and drain can restrict the current flow between them. This is done by varying the gate-source voltage, which changes the amount of current that can travel between source and drain. This is how the switch is controlled, and why the switch is used in this application field.
When it comes to the work principle of SPD30N03S2L07GBTMA1, the device uses an enhancement mode. This means that it allows the flow of current through the semiconductor when a signal is applied to the gate, and this flow of current is used to control the signal. This allows the signal to be regulated more efficiently, and can also be used to improve signal transmission.
In terms of application field, the SPD30N03S2L07GBTMA1 can be used in a variety of areas. In most cases, it is used in electrical equipment and automotive applications, where it is used to control the flow of both high and low current. It can also be used in telecommunications, where it can help regulate the signal strength, and in medical equipment, where it can be used to regulate a multitude of electrical components.
When it comes to using SPD30N03S2L07GBTMA1, the most important thing is understanding the limitations and capabilities of the transistor. If too high a voltage is applied to the gate, or if the transistor is overloaded, it can become damaged. Additionally, the transistor must be considered when choosing other components for the circuit, such as resistors and capacitors, to ensure that there is no interference between them.
Overall, the SPD30N03S2L07GBTMA1 transistor is a useful and versatile device that can be used in a variety of applications. It is useful for both low and high power applications, as well as for controlling other electrical components. The key to ensuring that the transistor is used correctly is to understand the capabilities and limitations of the transistor, as well as the other components in the circuit, so that the electronics can be used safely and effectively.
The specific data is subject to PDF, and the above content is for reference
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