Allicdata Part #: | SPD30N08S2L-21-ND |
Manufacturer Part#: |
SPD30N08S2L-21 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 75V 30A DPAK |
More Detail: | N-Channel 75V 30A (Tc) 136W (Tc) Surface Mount P-T... |
DataSheet: | SPD30N08S2L-21 Datasheet/PDF |
Quantity: | 1000 |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 20.5 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2130pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 136W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | P-TO252-3 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Series: | OptiMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 75V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
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The SPD30N08S2L-21 is a lightning fast, synchronous MOSFET specifically designed for use in advanced power management and power conversion applications. This MOSFET is created using a mainly advanced, low RDS(on) Technology. It has low resistance and improves performance while reducing power loss and handles that is due to switching and also increases power efficiency. It was designed to help reduce switching and it is an ideal choice for applications that require high speed switching and a few of those applications include: load switching, DC motor control, SMPS (switched mode power supply) control and other power control circuits.
The working principle of the SPD30N08S2L-21 is very simple. It uses a MOSFET which is a three-terminal voltage-controlled transistor. A MOSFET has a source which is connected to the drain, a gate which is connected to the power supply voltage, and a body connection. The MOSFET is able to amplify and switch signals when the gate is connected to the power supply. When the power is applied to the gate, it creates an electric field between the gate and the source/drain, allowing the current to pass through the MOSFET. When the current flows through, it creates an electro-magnetic field or “force”, which helps to control the flow of current.
The SPD30N08S2L-21 can be used for a wide range of applications that require high speed switching and low resistance. Some of the more common applications include: load switching, DC motor control, switching power supplies, and other power control circuits. For example, they can be used to switch a battery in and out of a circuit, control the speed of a motor, and control the power of a switched-mode power supply (SMPS). The SPD30N08S2L-21 can also be used as a substitute for a traditional NPN power transistor in an analog circuit.
The SPD30N08S2L-21 is also equipped with an integralSchottky diode that protects against voltage spikes generated during switching operations. This diode has a threshold voltage of 40V and a peak forward current rating of 5A. The integrated diode helps protect against the damaging effects of voltage spikes, helping to extend the life of the MOSFET.
The SPD30N08S2L-21 is a versatile and reliable MOSFET with a low RDS(on) that is ideal for a number of applications that require a high speed switch and a low resistance conduction path. The integrated Schottky diode helps protect it against voltage spikes, helping to greatly extend its life. It can be used for load switching, DC motor control, switching power supplies, and other power control circuits. The excellent performance and low resistance make it a great choice for those applications.
The specific data is subject to PDF, and the above content is for reference
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