SPD30N03S2L20GBTMA1 Allicdata Electronics
Allicdata Part #:

SPD30N03S2L20GBTMA1TR-ND

Manufacturer Part#:

SPD30N03S2L20GBTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 30A TO252-3
More Detail: N-Channel 30V 30A (Tc) 60W (Tc) Surface Mount PG-T...
DataSheet: SPD30N03S2L20GBTMA1 datasheetSPD30N03S2L20GBTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: OptiMOS™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 20 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 2V @ 23µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
FET Feature: --
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The SPD30N03S2L20GBTMA1 is a high performance N-Channel Power MOSFET that is based on the latest advances in power MOSFET technologies. It has an on resistance of 30mΩ which is considered low in comparison to other devices in its class. This device has an on-level threshold voltage of 4V, a typical Gate-Drain SOA of 75A and can handle up to 20A continuous drain current.

This device is used in a wide range of applications including automotive, industrial, telecommunications, consumer and medical applications. It is typically used in power management, power conversion, power control, RF power applications, AC-DC and DC-DC conversions, and hot swapping applications. Furthermore, this device is particularly suitable for high current applications that require a low on-resistance.

The SPD30N03S2L20GBTMA1 device is constructed using an N-Channel MOSFET with a maximum voltage rating of 30V and a maximum drain current rating of 20A. This device uses a metal-oxide semiconductor to form a controlled and repeatable ohmic contact between the drain and the source. A metal oxide layer acts as a barrier between the two metal elements and prevents the two metal layers from coming into direct contact. This metal layer also provides a consistent resistance and permits the device to be used in high current applications.

The SPD30N03S2L20GBTMA1 device operates in two distinct modes, enhancement and depletion. In enhancement mode, the MOSFET is off and the drain and source are at the same voltage. This means that no current flows. When a voltage is applied to the gate, electrons in the channel are attracted, resulting in higher conductivity. This allows the drain current to flow, thus the MOSFET is put in an "on" state. In depletion mode, a voltage is applied to the gate, which acts to repel electrons from the channel. This creates less conductivity through the channel as fewer electrons are present, reducing the drain current to zero. This device can be used for both enhancement and depletion mode operations.

The SPD30N03S2L20GBTMA1 is a versatile component that serves a number of applications. It is incredibly efficient due to its low on-resistance, making it ideal for applications where high current is required. Furthermore, it is stable over a wide operating temperature range due to its reliable gate-drain SOA.

The specific data is subject to PDF, and the above content is for reference

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